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Unidirectional threshold resistive switching in Au/NiO/Nb:SrTiO
3
devices
M. Q. Guo
, Y. C. Chen
, C. Y. Lin
, Y. F. Chang
, Burt Fowler
, Q. Q. Li
, J. Lee
, Y. G. Zhao
Research output
:
Contribution to journal
›
Article
›
peer-review
26
Scopus citations
Overview
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Dive into the research topics of 'Unidirectional threshold resistive switching in Au/NiO/Nb:SrTiO
3
devices'. Together they form a unique fingerprint.
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Keyphrases
SrTiO3
100%
NiO Films
100%
Threshold Resistive Switching
100%
Resistive Switching
75%
Capacitance-voltage
75%
Conductive Filament
50%
Schottky Junction
50%
Film Thickness
25%
Current-voltage
25%
As-grown
25%
Selector Device
25%
Positive-sequence Voltage
25%
Switching Application
25%
Threshold Switching
25%
Forming Process
25%
Pulsed Laser Deposition
25%
Interface Film
25%
Material Science
Film
100%
Capacitance
100%
Film Thickness
33%
Pulsed Laser Deposition
33%
Engineering
Resistive
100%
Conductive Filament
33%
Induced Voltage
16%
Pulsed Laser
16%
Positive Voltage
16%
Switching Threshold
16%
Physics
Resistive Switching
100%
Capacitance-Voltage Characteristics
33%
Film Thickness
16%
Pulsed Laser Deposition
16%