Unidirectional threshold resistive switching in Au/NiO/Nb:SrTiO3 devices

M. Q. Guo; Y. C. Chen; C. Y. Lin; Y. F. Chang; Burt Fowler; Q. Q. Li; J. Lee; Y. G. Zhao

doi:10.1063/1.4985070

Unidirectional threshold resistive switching in Au/NiO/Nb:SrTiO₃ devices

M. Q. Guo, Y. C. Chen, C. Y. Lin, Y. F. Chang, Burt Fowler, Q. Q. Li, J. Lee, Y. G. Zhao

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

A voltage-induced unidirectional threshold resistive switching has been reported for Au/NiO/Nb:SrTiO₃ devices fabricated by pulsed laser deposition. The devices show the threshold resistive switching behavior only for the positive voltages, determined by the forming process. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the as-grown samples with different thicknesses suggest that the I-V and C-V properties are dominated by the Schottky junction at the NiO/Nb:SrTiO₃ interface and NiO film, respectively, indicating the formation of conductive filaments in NiO film. Furthermore, the effect of NiO-film thickness on the resistive switching, as well as the I-V and C-V characteristics, indicates that the unidirectional threshold resistive switching originates from the combined contributions of the interfacial Schottky junction modulation and the bipolar threshold switching related to the unstable conductive filament in NiO film. Our research results provide additional insights into the resistive switching mechanism as well as applications of selector device.

Original language	English (US)
Article number	233504
Journal	Applied Physics Letters
Volume	110
Issue number	23
DOIs	https://doi.org/10.1063/1.4985070
State	Published - Jun 5 2017
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Unidirectional threshold resistive switching in Au/NiO/Nb:SrTiO3 devices",

abstract = "A voltage-induced unidirectional threshold resistive switching has been reported for Au/NiO/Nb:SrTiO3 devices fabricated by pulsed laser deposition. The devices show the threshold resistive switching behavior only for the positive voltages, determined by the forming process. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the as-grown samples with different thicknesses suggest that the I-V and C-V properties are dominated by the Schottky junction at the NiO/Nb:SrTiO3 interface and NiO film, respectively, indicating the formation of conductive filaments in NiO film. Furthermore, the effect of NiO-film thickness on the resistive switching, as well as the I-V and C-V characteristics, indicates that the unidirectional threshold resistive switching originates from the combined contributions of the interfacial Schottky junction modulation and the bipolar threshold switching related to the unstable conductive filament in NiO film. Our research results provide additional insights into the resistive switching mechanism as well as applications of selector device.",

author = "Guo, {M. Q.} and Chen, {Y. C.} and Lin, {C. Y.} and Chang, {Y. F.} and Burt Fowler and Li, {Q. Q.} and J. Lee and Zhao, {Y. G.}",

note = "Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

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doi = "10.1063/1.4985070",

language = "English (US)",

volume = "110",

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AU - Guo, M. Q.

AU - Chen, Y. C.

AU - Lin, C. Y.

AU - Chang, Y. F.

AU - Fowler, Burt

AU - Li, Q. Q.

AU - Lee, J.

AU - Zhao, Y. G.

PY - 2017/6/5

Y1 - 2017/6/5

N2 - A voltage-induced unidirectional threshold resistive switching has been reported for Au/NiO/Nb:SrTiO3 devices fabricated by pulsed laser deposition. The devices show the threshold resistive switching behavior only for the positive voltages, determined by the forming process. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the as-grown samples with different thicknesses suggest that the I-V and C-V properties are dominated by the Schottky junction at the NiO/Nb:SrTiO3 interface and NiO film, respectively, indicating the formation of conductive filaments in NiO film. Furthermore, the effect of NiO-film thickness on the resistive switching, as well as the I-V and C-V characteristics, indicates that the unidirectional threshold resistive switching originates from the combined contributions of the interfacial Schottky junction modulation and the bipolar threshold switching related to the unstable conductive filament in NiO film. Our research results provide additional insights into the resistive switching mechanism as well as applications of selector device.

AB - A voltage-induced unidirectional threshold resistive switching has been reported for Au/NiO/Nb:SrTiO3 devices fabricated by pulsed laser deposition. The devices show the threshold resistive switching behavior only for the positive voltages, determined by the forming process. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the as-grown samples with different thicknesses suggest that the I-V and C-V properties are dominated by the Schottky junction at the NiO/Nb:SrTiO3 interface and NiO film, respectively, indicating the formation of conductive filaments in NiO film. Furthermore, the effect of NiO-film thickness on the resistive switching, as well as the I-V and C-V characteristics, indicates that the unidirectional threshold resistive switching originates from the combined contributions of the interfacial Schottky junction modulation and the bipolar threshold switching related to the unstable conductive filament in NiO film. Our research results provide additional insights into the resistive switching mechanism as well as applications of selector device.

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Unidirectional threshold resistive switching in Au/NiO/Nb:SrTiO₃ devices

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