Unidirectional threshold resistive switching in Au/NiO/Nb:SrTiO3 devices

M. Q. Guo, Y. C. Chen, C. Y. Lin, Y. F. Chang, Burt Fowler, Q. Q. Li, J. Lee, Y. G. Zhao

Research output: Contribution to journalArticlepeer-review

25 Scopus citations


A voltage-induced unidirectional threshold resistive switching has been reported for Au/NiO/Nb:SrTiO3 devices fabricated by pulsed laser deposition. The devices show the threshold resistive switching behavior only for the positive voltages, determined by the forming process. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the as-grown samples with different thicknesses suggest that the I-V and C-V properties are dominated by the Schottky junction at the NiO/Nb:SrTiO3 interface and NiO film, respectively, indicating the formation of conductive filaments in NiO film. Furthermore, the effect of NiO-film thickness on the resistive switching, as well as the I-V and C-V characteristics, indicates that the unidirectional threshold resistive switching originates from the combined contributions of the interfacial Schottky junction modulation and the bipolar threshold switching related to the unstable conductive filament in NiO film. Our research results provide additional insights into the resistive switching mechanism as well as applications of selector device.

Original languageEnglish (US)
Article number233504
JournalApplied Physics Letters
Issue number23
StatePublished - Jun 5 2017
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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