Ultralow 0.034 dB/m loss wafer-scale integrated photonics realizing 720 million Q and 380 µW threshold Brillouin lasing

Keyphrases

• Ultra-low 100%
• Resonator 100%
• Integrated Photonics 100%
• Wafer-scale 100%
• Brillouin Lasing 100%
• Energy Efficient 66%
• Silicon Nitride 66%
• Oxides 33%
• Performance Level 33%
• Waveguide 33%
• Si3N4 Waveguide 33%
• Brillouin Laser 33%
• Scientific Applications 33%
• Scattering Loss 33%
• Plasma-enhanced Chemical Vapor Deposition (PECVD) 33%
• Photonic Integration 33%
• Precision Metrology 33%
• 200 Mm Wafers 33%
• Optical Atomic Clocks 33%
• Blanket Layer 33%
• Waveguide Design 33%
• Intrinsic Linewidth 33%
• Threshold Power 33%
• Thermal Oxide 33%
• Low Pressure Chemical Vapor Deposition (LPCVD) 33%
• Efficient Generation 33%
• Integration Platform 33%
• Tetraethoxysilane 33%

Physics

• Waveguide 100%
• Resonator 100%
• Photonics 100%
• Lasing 100%
• Vapor Deposition 66%
• Linewidth 33%
• Silicon Nitride 33%
• Atomic Clock 33%
• Cladding 33%

Material Science

• Waveguide 100%
• Silicon Nitride 100%
• Resonator 100%
• Oxide Compound 66%
• Linewidth 33%
• Tetraethyl Orthosilicate 33%
• Low Pressure Chemical Vapor Deposition 33%
• Plasma-Enhanced Chemical Vapor Deposition 33%