Ultralow 0.034 dB/m loss wafer-scale integrated photonics realizing 720 million Q and 380 µW threshold Brillouin lasing

Kaikai Liu, Naijun Jin, Haotian Cheng, Nitesh Chauhan, Matthew W. Puckett, Karl D. Nelson, Ryan O. Behunin, Peter T. Rakich, Daniel J. Blumenthal

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We demonstrate 0.034 dB/m loss waveguides in a 200-mm wafer-scale, silicon nitride (Si3N4) CMOS-foundrycompatible integration platform. We fabricate resonators that measure up to a 720 million intrinsic Q resonator at 1615 nm wavelength with a 258 kHz intrinsic linewidth. This resonator is used to realize a Brillouin laser with an energy-efficient 380 µW threshold power. The performance is achieved by reducing scattering losses through a combination of single-mode TM waveguide design and an etched blanket-layer low-pressure chemical vapor deposition (LPCVD) 80 nm Si3N4 waveguide core combined with thermal oxide lower and tetraethoxysilane plasma-enhanced chemical vapor deposition (TEOS–PECVD) upper oxide cladding. This level of performance will enable photon preservation and energy-efficient generation of the spectrally pure light needed for photonic integration of a wide range of future precision scientific applications, including quantum, precision metrology, and optical atomic clocks.

Original languageEnglish (US)
Pages (from-to)1855-1858
Number of pages4
JournalOptics Letters
Volume47
Issue number7
DOIs
StatePublished - Apr 1 2022

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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