TY - JOUR
T1 - Trngs from pre‐formed reram arrays
AU - Cambou, Bertrand
AU - Telesca, Donald
AU - Assiri, Sareh
AU - Garrett, Michael
AU - Jain, Saloni
AU - Partridge, Michael
N1 - Funding Information:
Funding: This material is based upon the work funded by the Information Directorate under AFRL award number FA8750‐19‐2‐0503.
Publisher Copyright:
© 2021 by the author. Licensee MDPI, Basel, Switzerland.
PY - 2021/3
Y1 - 2021/3
N2 - Schemes generating cryptographic keys from arrays of pre‐formed Resistive Random Access (ReRAM) cells, called memristors, can also be used for the design of fast true random number generators (TRNG’s) of exceptional quality, while consuming low levels of electric power. Natural randomness is formed in the large stochastic cell‐to‐cell variations in resistance values at low injected currents in the pre‐formed range. The proposed TRNG scheme can be designed with three interconnected blocks: (i) a pseudo‐random number generator that acts as an extended output function to generate a stream of addresses pointing randomly at the array of ReRAM cells; (ii) a method to read the resistance values of these cells with a low injected current, and to convert the values into a stream of random bits; and, if needed, (iii) a method to further enhance the randomness of this stream such as mathematical, Boolean, and cryptographic algorithms. The natural stochastic properties of the ReRAM cells in the pre‐forming range, at low currents, have been analyzed and demonstrated by measuring a statistically significant number of cells. Various implementations of the TRNGs with ReRAM arrays are presented in this paper.
AB - Schemes generating cryptographic keys from arrays of pre‐formed Resistive Random Access (ReRAM) cells, called memristors, can also be used for the design of fast true random number generators (TRNG’s) of exceptional quality, while consuming low levels of electric power. Natural randomness is formed in the large stochastic cell‐to‐cell variations in resistance values at low injected currents in the pre‐formed range. The proposed TRNG scheme can be designed with three interconnected blocks: (i) a pseudo‐random number generator that acts as an extended output function to generate a stream of addresses pointing randomly at the array of ReRAM cells; (ii) a method to read the resistance values of these cells with a low injected current, and to convert the values into a stream of random bits; and, if needed, (iii) a method to further enhance the randomness of this stream such as mathematical, Boolean, and cryptographic algorithms. The natural stochastic properties of the ReRAM cells in the pre‐forming range, at low currents, have been analyzed and demonstrated by measuring a statistically significant number of cells. Various implementations of the TRNGs with ReRAM arrays are presented in this paper.
KW - Cryptographic systems
KW - Low power
KW - Random number generation
KW - Resistive memories
KW - Unclonable functions
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U2 - 10.3390/cryptography5010008
DO - 10.3390/cryptography5010008
M3 - Article
AN - SCOPUS:85102000003
SN - 2410-387X
VL - 5
SP - 1
EP - 21
JO - Cryptography
JF - Cryptography
IS - 1
M1 - 8
ER -