Trngs from pre‐formed reram arrays

Schemes generating cryptographic keys from arrays of pre‐formed Resistive Random Access (ReRAM) cells, called memristors, can also be used for the design of fast true random number generators (TRNG’s) of exceptional quality, while consuming low levels of electric power. Natural randomness is formed in the large stochastic cell‐to‐cell variations in resistance values at low injected currents in the pre‐formed range. The proposed TRNG scheme can be designed with three interconnected blocks: (i) a pseudo‐random number generator that acts as an extended output function to generate a stream of addresses pointing randomly at the array of ReRAM cells; (ii) a method to read the resistance values of these cells with a low injected current, and to convert the values into a stream of random bits; and, if needed, (iii) a method to further enhance the randomness of this stream such as mathematical, Boolean, and cryptographic algorithms. The natural stochastic properties of the ReRAM cells in the pre‐forming range, at low currents, have been analyzed and demonstrated by measuring a statistically significant number of cells. Various implementations of the TRNGs with ReRAM arrays are presented in this paper.