@inproceedings{90ee888662f341b58d51ce3ccb93b24f,
title = "Thin germanium-carbon layers on silicon for MOS applications",
abstract = "We report the growth and materials characterization of thin (<35 nm) germanium-carbon alloy (Ge1-xCx) layers grown directly on Si by ultra-high-vacuum chemical vapor deposition. We show that the presence of C atoms is limited to a thin interfacial region at the Si substrate, and interpret this result as a mechanism for strain relief. We also show that the Ge1-xCx films exhibit remarkably low threading dislocation densities despite significant relaxation. copyright The Electrochemical Society.",
author = "Kelly, {D. Q.} and I. Wiedmann and Guti{\'e}rrez, {D. I.Garc{\'i}a} and Yacam{\'a}n, {M. Jos{\'e}} and Banerjee, {S. K.}",
year = "2006",
doi = "10.1149/1.2355902",
language = "English (US)",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "7",
pages = "1077--1086",
booktitle = "SiGe and Ge",
edition = "7",
note = "SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",
}