Thin germanium-carbon layers deposited directly on silicon for metal-oxide-semiconductor devices

Keyphrases

• Germanium Carbon 100%
• Carbon Layer 100%
• Metal-oxide-semiconductor Devices 100%
• Transmission Electron Microscopy 50%
• Material Characterization 50%
• Secondary Ion Mass Spectrometry 50%
• Growth Process 50%
• High-resolution Electron Energy Loss Spectroscopy (HREELS) 50%
• Diffraction 50%
• Strain Relaxation 50%
• Si(111) 50%
• Strain Relaxation Mechanism 50%
• Carbon Segregation 50%
• High Vacuum Chemical Vapor Deposition 50%
• Process Characterization 50%
• Carbon Alloy 50%
• Etch pit Density 50%
• Low Threading Dislocation Density 50%

Material Science

• Silicon 100%
• Film 100%
• Density 100%
• Semiconductor Device 100%
• Germanium 100%
• Oxide Semiconductor 100%
• Metal Oxide 100%
• Transmission Electron Microscopy 50%
• Secondary Ion Mass Spectrometry 50%
• Electron Energy Loss Spectrometry 50%
• Chemical Vapor Deposition 50%

Physics

• Secondary Ion Mass Spectrometry 100%
• Electron Energy 100%
• Transmission Electron Microscopy 100%
• Vapor Deposition 100%
• Ultrahigh Vacuum 100%
• Semiconductor Device 100%
• Metal Oxide Semiconductor 100%