Engineering & Materials Science
Strain relaxation
100%
MOS devices
81%
Germanium
79%
Electron energy loss spectroscopy
53%
Silicon
46%
Ultrahigh vacuum
46%
Carbon
44%
Secondary ion mass spectrometry
44%
Chemical vapor deposition
34%
Diffraction
31%
Transmission electron microscopy
30%
X rays
26%
Characterization (materials science)
25%
Substrates
20%
Physics & Astronomy
metal oxide semiconductors
60%
semiconductor devices
60%
germanium
52%
carbon
39%
silicon
31%
secondary ion mass spectrometry
30%
ultrahigh vacuum
29%
x ray diffraction
25%
energy dissipation
23%
vapor deposition
22%
electron energy
22%
transmission electron microscopy
19%
characterization
16%
spectroscopy
15%
Chemical Compounds
Threading Dislocation
55%
Strain
41%
Electron Energy Loss Spectroscopy
36%
Secondary Ion Mass Spectroscopy
32%
Liquid Film
28%
Chemical Vapour Deposition
26%
Alloy
20%
Transmission Electron Microscopy
19%
Carbon Atom
13%