Thin germanium-carbon layers deposited directly on silicon for metal-oxide-semiconductor devices

D. Q. Kelly; I. Wiedmann; D. I. García-Gutierrez; M. José-Yacamán; S. K. Banerjee

doi:10.1088/0268-1242/22/1/S48

Thin germanium-carbon layers deposited directly on silicon for metal-oxide-semiconductor devices

D. Q. Kelly, I. Wiedmann, D. I. García-Gutierrez, M. José-Yacamán, S. K. Banerjee

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We report the growth process and materials characterization of germanium-carbon alloys (Ge_1-xC_x) deposited directly on Si (1 0 0) substrates by ultra-high-vacuum chemical vapour deposition. The Ge _1-xC_x films are characterized by transmission electron microscopy, etch-pit density, x-ray diffraction, secondary ion mass spectrometry and electron energy loss spectroscopy. The results show that the films exhibit low threading dislocation densities despite significant strain relaxation. We also present evidence for carbon segregation in the Ge_1-xC _x and interpret these results as a strain relaxation mechanism.

Original language	English (US)
Article number	S48
Pages (from-to)	S204-S207
Journal	Semiconductor Science and Technology
Volume	22
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/22/1/S48
State	Published - Jan 1 2007
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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abstract = "We report the growth process and materials characterization of germanium-carbon alloys (Ge1-xCx) deposited directly on Si (1 0 0) substrates by ultra-high-vacuum chemical vapour deposition. The Ge 1-xCx films are characterized by transmission electron microscopy, etch-pit density, x-ray diffraction, secondary ion mass spectrometry and electron energy loss spectroscopy. The results show that the films exhibit low threading dislocation densities despite significant strain relaxation. We also present evidence for carbon segregation in the Ge1-xC x and interpret these results as a strain relaxation mechanism.",

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AU - Kelly, D. Q.

AU - Wiedmann, I.

AU - García-Gutierrez, D. I.

AU - José-Yacamán, M.

AU - Banerjee, S. K.

PY - 2007/1/1

Y1 - 2007/1/1

N2 - We report the growth process and materials characterization of germanium-carbon alloys (Ge1-xCx) deposited directly on Si (1 0 0) substrates by ultra-high-vacuum chemical vapour deposition. The Ge 1-xCx films are characterized by transmission electron microscopy, etch-pit density, x-ray diffraction, secondary ion mass spectrometry and electron energy loss spectroscopy. The results show that the films exhibit low threading dislocation densities despite significant strain relaxation. We also present evidence for carbon segregation in the Ge1-xC x and interpret these results as a strain relaxation mechanism.

AB - We report the growth process and materials characterization of germanium-carbon alloys (Ge1-xCx) deposited directly on Si (1 0 0) substrates by ultra-high-vacuum chemical vapour deposition. The Ge 1-xCx films are characterized by transmission electron microscopy, etch-pit density, x-ray diffraction, secondary ion mass spectrometry and electron energy loss spectroscopy. The results show that the films exhibit low threading dislocation densities despite significant strain relaxation. We also present evidence for carbon segregation in the Ge1-xC x and interpret these results as a strain relaxation mechanism.

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Thin germanium-carbon layers deposited directly on silicon for metal-oxide-semiconductor devices

Abstract

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