Thin germanium-carbon layers deposited directly on silicon for metal-oxide-semiconductor devices

D. Q. Kelly, I. Wiedmann, D. I. García-Gutierrez, M. José-Yacamán, S. K. Banerjee

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We report the growth process and materials characterization of germanium-carbon alloys (Ge1-xCx) deposited directly on Si (1 0 0) substrates by ultra-high-vacuum chemical vapour deposition. The Ge 1-xCx films are characterized by transmission electron microscopy, etch-pit density, x-ray diffraction, secondary ion mass spectrometry and electron energy loss spectroscopy. The results show that the films exhibit low threading dislocation densities despite significant strain relaxation. We also present evidence for carbon segregation in the Ge1-xC x and interpret these results as a strain relaxation mechanism.

Original languageEnglish (US)
Article numberS48
Pages (from-to)S204-S207
JournalSemiconductor Science and Technology
Volume22
Issue number1
DOIs
StatePublished - Jan 1 2007
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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