Keyphrases
Diffraction
100%
Germanium Carbon
100%
Metal-oxide-semiconductor Capacitor (MOSCAP)
100%
Device Application
100%
Carbon Alloy
100%
Metal-oxide-semiconductor Devices
100%
Alloy Layer
100%
Atomic Force Microscopy
50%
Secondary Ion Mass Spectrometry
50%
C Concentration
50%
Electrical Characteristics
50%
Deposition Pressure
50%
High Vacuum Chemical Vapor Deposition
50%
Metal Gate
50%
Gate Metal
50%
Growth Temperature
50%
Capacitance-voltage
50%
Cross-sectional Transmission Electron Microscopy
50%
Etch pit
50%
High Carrier Mobility
50%
Threading Dislocation Density
50%
Well-behaved
50%
Fabricated Metal
50%
Leakage Characteristics
50%
Material Science
Silicon
100%
Semiconductor Device
100%
Germanium
100%
Oxide Semiconductor
100%
Metal Oxide
100%
Capacitor
50%
Film
25%
Density
25%
Transmission Electron Microscopy
25%
Secondary Ion Mass Spectrometry
25%
Capacitance
25%
Electrical Property
25%
Chemical Vapor Deposition
25%
Carrier Mobility
25%
Engineering
Semiconductor Device
100%
Metal Oxide Semiconductor
100%
Carbon Alloy
100%
Alloy Layer
100%
Ray Diffraction
50%
Transmissions
25%
Atomic Force Microscopy
25%
Vapor Deposition
25%
Chemical Vapor Deposition
25%
Threading Dislocation
25%
Metal Gate
25%
Dislocation Density
25%
Carrier Mobility
25%
Growth Temperature
25%
Physics
Semiconductor Device
100%
Metal Oxide Semiconductor
100%
Secondary Ion Mass Spectrometry
25%
Transmission Electron Microscopy
25%
Vapor Deposition
25%
Ultrahigh Vacuum
25%
Carrier Mobility
25%
Atomic Force Microscopy
25%