Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications

D. Q. Kelly, I. Wiedmann, J. P. Donnelly, S. V. Joshi, S. Dey, S. K. Banerjee, D. I. Garcia-Gutierrez, M. Josá-Yacamán

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

We report the growth and characterization of thin (<35 nm) germanium-carbon alloy (Ge1-x Cx) layers grown directly on Si by ultrahigh-vacuum chemical vapor deposition, with capacitance-voltage and leakage characteristics of the first high- κ /metal gate metal-oxide- semiconductor (MOS) capacitors fabricated on Ge1-x Cx. The Ge1-x Cx layers have an average C concentration of approximately 1 at. % and were obtained using the reaction of C H3 Ge H3 and Ge H4 at a deposition pressure of 5 mTorr and growth temperature of 450 °C. The Ge1-x Cx films were characterized by secondary ion mass spectrometry, atomic force microscopy, x-ray diffraction, and cross-sectional transmission electron microscopy. A modified etch pit technique was used to calculate the threading dislocation density. The x-ray diffraction results showed that the Ge1-x Cx layers were partially relaxed. The fabricated MOS capacitors exhibited well-behaved electrical characteristics, demonstrating the feasibility of Ge1-x Cx layers on Si for future high-carrier-mobility MOS devices.

Original languageEnglish (US)
Article number152101
JournalApplied Physics Letters
Volume88
Issue number15
DOIs
StatePublished - Apr 10 2006
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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