Abstract
A series of In2O3 thin films, ranging from X-ray diffraction amorphous to highly crystalline, were grown on amorphous silica substrates using pulsed laser deposition by varying the film growth temperature. The amorphous-tocrystalline transition and the structure of amorphous In2O3 were investigated by grazing angle X-ray diffraction (GIXRD), Hall transport measurement, high resolution transmission electron microscopy (HRTEM), electron diffraction, extended X-ray absorption fine structure (EXAFS), and ab initio molecular dynamics (MD) liquid-quench simulation. On the basis of excellent agreement between the EXAFS and MD results, a model of the amorphous oxide structure as a network of InOx polyhedra was constructed. Mechanisms for the transport properties observed in the crystalline, amorphous-to-crystalline, and amorphous deposition regions are presented, highlighting a unique structure-property relationship.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 5401-5411 |
| Number of pages | 11 |
| Journal | Chemistry of Materials |
| Volume | 26 |
| Issue number | 18 |
| DOIs | |
| State | Published - Sep 23 2014 |
| Externally published | Yes |
ASJC Scopus subject areas
- General Chemistry
- General Chemical Engineering
- Materials Chemistry
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