Keyphrases
Oxide-based
100%
Enhanced Selectivity
100%
Vanadium Oxide
100%
Vanadium
60%
Sweeping
40%
Simulation Analysis
40%
Resistive Random Access Memory (ReRAM)
40%
Oxide Ion
40%
Fitting Analysis
40%
Off-state Current
40%
Behavioral Model
20%
Oxides
20%
Endurance Performance
20%
Conduction Mechanism
20%
Number of Cycles
20%
Material Analysis
20%
Resistive Switching
20%
Annealing Process
20%
Memory Device
20%
Metal-insulator Transition
20%
Current Fitting
20%
Conductive Filament
20%
Electrical Field
20%
Thermal Concentration
20%
Transition Characteristics
20%
Oxide Layer
20%
Sweep Test
20%
Schottky Emission
20%
Negative Voltage
20%
Thermal Field Simulation
20%
Schottky
20%
1S1R
20%
Memory Structure
20%
Fitting Simulation
20%
Switching Layer
20%
Concentration Effect
20%
Engineering
Experimental Measurement
100%
Resistive Random Access Memory
100%
Experimental Result
50%
Resistive
50%
Random Access Memory Device
50%
Negative Forming
50%
Annealing Process
50%
Electrical Field
50%
Oxide Layer
50%
Thermal Field
50%
Material Science
Oxide Compound
100%
Vanadium
100%
Resistive Random-Access Memory
25%
Annealing
12%