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Study of two-dimensional B doping profile in Si fin field-effect transistor structures by high angle annular dark field in scanning transmission electron microscopy mode

  • D. I. Garcia-Gutierrez
  • , M. Jose-Yacaman
  • , A. A. Khajetoorians
  • , C. K. Shih
  • , X. D. Wang
  • , D. Pham
  • , H. Celio
  • , A. Diebold

Research output: Contribution to journal › Article › peer-review

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