Study of two-dimensional B doping profile in Si fin field-effect transistor structures by high angle annular dark field in scanning transmission electron microscopy mode
D. I. Garcia-Gutierrez, M. Jose-Yacaman, A. A. Khajetoorians, C. K. Shih, X. D. Wang, D. Pham, H. Celio, A. Diebold
Research output: Contribution to journal › Article › peer-review
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