Study of quantum point contact via low temperature scanning gate microscopy

N. Aoki; A. Burke; C. R. Da Cunha; R. Akis; D. K. Ferry; Y. Ochiai

doi:10.1088/1742-6596/38/1/020

Study of quantum point contact via low temperature scanning gate microscopy

N. Aoki, A. Burke, C. R. Da Cunha, R. Akis, D. K. Ferry, Y. Ochiai

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Two types of quantum point contacts have been studied by low temperature scanning gate microscopy. In addition to the usual bright spot, which corresponds to a large conductance change at the constriction, ring structures are observed near the center of the quantum point contact. The ring diameter shrinks with increasing base conductance when the side gate voltage is changed. The rings are thought to relate to the observation of impurity potentials in the constriction region.

Original language	English (US)
Pages (from-to)	79-82
Number of pages	4
Journal	Journal of Physics: Conference Series
Volume	38
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/38/1/020
State	Published - May 10 2006
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1088/1742-6596/38/1/020

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abstract = "Two types of quantum point contacts have been studied by low temperature scanning gate microscopy. In addition to the usual bright spot, which corresponds to a large conductance change at the constriction, ring structures are observed near the center of the quantum point contact. The ring diameter shrinks with increasing base conductance when the side gate voltage is changed. The rings are thought to relate to the observation of impurity potentials in the constriction region.",

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AU - Ferry, D. K.

AU - Ochiai, Y.

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AB - Two types of quantum point contacts have been studied by low temperature scanning gate microscopy. In addition to the usual bright spot, which corresponds to a large conductance change at the constriction, ring structures are observed near the center of the quantum point contact. The ring diameter shrinks with increasing base conductance when the side gate voltage is changed. The rings are thought to relate to the observation of impurity potentials in the constriction region.

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Study of quantum point contact via low temperature scanning gate microscopy

Abstract

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