Abstract
A flake of monolayer graphene was sandwiched between boron nitride sheets. Temperature dependent Shubnikov-de Haas measurements were performed to access how this technique influences the electronic properties of the graphene sample. The maximum mobility found in this configuration was approximately 105 cm2 Vs -1. From the phase of the oscillations a Berry phase β of 1/2 was obtained indicating the presence of Dirac fermions. We obtained Fermi velocities around m s-1 which imply hopping energies close to 2.5 eV. Furthermore, the carrier lifetime is typically higher than that found in graphene supported by SiO2, reaching values higher than 700 fs.
| Original language | English (US) |
|---|---|
| Article number | 225301 |
| Journal | Journal of Physics Condensed Matter |
| Volume | 29 |
| Issue number | 22 |
| DOIs | |
| State | Published - Apr 28 2017 |
| Externally published | Yes |
Keywords
- Shubnikov-de Haas
- grapheme
- transport
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics