Self-Selective Dielectric-Fuse Effect with Ambient Factors in Oxide-Based Memory

Ying Chen Chen; Yifu Huang; Jack C. Lee; Justin B. Stouffer

doi:10.1149/2162-8777/acd959

Self-Selective Dielectric-Fuse Effect with Ambient Factors in Oxide-Based Memory

Ying Chen Chen, Yifu Huang, Jack C. Lee, Justin B. Stouffer

Research output: Contribution to journal › Article › peer-review

Abstract

A dual-function memory with CMOS compatibility has been presented with the feasibility of future embedded applications. The self-selective memory composed of bilayer oxide stacks is presented with the immunity of sneak-path current (SPC) and improved thermal stability for the high storage class memory array application. Meanwhile, the one-Time programmable (OTP) memory is realized by the identical bilayer structure which has improved the yield of dielectric-fuse phenomena by increasing the operating temperature up to 423 K. The physical mechanisms and modeling are investigated with experimental and simulated results. Our results provide pathfinding of high density, CMOS back-end-of-line (BEOL) integration capability, land ow power multi-functionality in the future embedded applications.

Original language	English (US)
Article number	065003
Journal	ECS Journal of Solid State Science and Technology
Volume	12
Issue number	6
DOIs	https://doi.org/10.1149/2162-8777/acd959
State	Published - Jun 2023
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1149/2162-8777/acd959

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title = "Self-Selective Dielectric-Fuse Effect with Ambient Factors in Oxide-Based Memory",

abstract = "A dual-function memory with CMOS compatibility has been presented with the feasibility of future embedded applications. The self-selective memory composed of bilayer oxide stacks is presented with the immunity of sneak-path current (SPC) and improved thermal stability for the high storage class memory array application. Meanwhile, the one-Time programmable (OTP) memory is realized by the identical bilayer structure which has improved the yield of dielectric-fuse phenomena by increasing the operating temperature up to 423 K. The physical mechanisms and modeling are investigated with experimental and simulated results. Our results provide pathfinding of high density, CMOS back-end-of-line (BEOL) integration capability, land ow power multi-functionality in the future embedded applications.",

author = "Chen, {Ying Chen} and Yifu Huang and Lee, {Jack C.} and Stouffer, {Justin B.}",

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T1 - Self-Selective Dielectric-Fuse Effect with Ambient Factors in Oxide-Based Memory

AU - Chen, Ying Chen

AU - Huang, Yifu

AU - Lee, Jack C.

AU - Stouffer, Justin B.

PY - 2023/6

Y1 - 2023/6

N2 - A dual-function memory with CMOS compatibility has been presented with the feasibility of future embedded applications. The self-selective memory composed of bilayer oxide stacks is presented with the immunity of sneak-path current (SPC) and improved thermal stability for the high storage class memory array application. Meanwhile, the one-Time programmable (OTP) memory is realized by the identical bilayer structure which has improved the yield of dielectric-fuse phenomena by increasing the operating temperature up to 423 K. The physical mechanisms and modeling are investigated with experimental and simulated results. Our results provide pathfinding of high density, CMOS back-end-of-line (BEOL) integration capability, land ow power multi-functionality in the future embedded applications.

AB - A dual-function memory with CMOS compatibility has been presented with the feasibility of future embedded applications. The self-selective memory composed of bilayer oxide stacks is presented with the immunity of sneak-path current (SPC) and improved thermal stability for the high storage class memory array application. Meanwhile, the one-Time programmable (OTP) memory is realized by the identical bilayer structure which has improved the yield of dielectric-fuse phenomena by increasing the operating temperature up to 423 K. The physical mechanisms and modeling are investigated with experimental and simulated results. Our results provide pathfinding of high density, CMOS back-end-of-line (BEOL) integration capability, land ow power multi-functionality in the future embedded applications.

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Self-Selective Dielectric-Fuse Effect with Ambient Factors in Oxide-Based Memory

Abstract

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