Abstract
A graphite-based RRAM device with a self-rectifying characteristic named “non-linearity (NL)” is developed for a high-density crossbar array for in-memory computing with low power and high scalability. Meanwhile, the reprogrammable functions are presented in self-selected RRAM as a promising candidate for one-time programmable (OTP) in the emerging memory-embedded applications such as security, system-on-chip (SoC), and Internet of Things (IoT).
| Original language | English (US) |
|---|---|
| Article number | 772234 |
| Journal | Frontiers in Nanotechnology |
| Volume | 3 |
| DOIs | |
| State | Published - Nov 22 2021 |
Keywords
- OTP
- fuse
- resistive random-access memory
- selectorless
- self-rectify
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
- Biomedical Engineering
- Computer Science Applications