Self-Rectified Graphite-Based Reprogrammable One-Time Programmable (RS-OTP) Memory for Embedded Applications

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1 Scopus citations


A graphite-based RRAM device with a self-rectifying characteristic named “non-linearity (NL)” is developed for a high-density crossbar array for in-memory computing with low power and high scalability. Meanwhile, the reprogrammable functions are presented in self-selected RRAM as a promising candidate for one-time programmable (OTP) in the emerging memory-embedded applications such as security, system-on-chip (SoC), and Internet of Things (IoT).

Original languageEnglish (US)
Article number772234
JournalFrontiers in Nanotechnology
StatePublished - Nov 22 2021


  • OTP
  • fuse
  • resistive random-access memory
  • selectorless
  • self-rectify

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering
  • Biomedical Engineering
  • Computer Science Applications


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