Selectorless oxide-based resistive switching memory with nonuniform dielectric for low power crossbar array applications

Ying Chen Chen, Chao Cheng Lin, Sungjun Kim, Jack C. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Selectorless resistive random-access memory (RRAM) with self-rectifying behavior is presented as a way to suppress sneak path current without an additional transistor or switch device integration, which is beneficial for reducing the cost and complexity of crossbar array fabrication. In this work, selectorless 1R-only graphite-based memristor devices have been demonstrated by utilizing the nonlinear (NL) resistive switching (RS) characteristics with well-designed operation conditions. The early stage of cycling observation as seasoning effect is investigated, while the wear-out mechanism is also discussed for the selectorless 1R-only RRAM crossbar array for high storage class memory applications.

Original languageEnglish (US)
Title of host publicationSilicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9
EditorsF. Roozeboom, P. J. Timans, K. Kakushima, E. P. Gusev, Z. Karim, D. Misra, Y. S. Obeng, S. De Gendt, H. Jagannathan
PublisherElectrochemical Society Inc.
Pages45-51
Number of pages7
Edition3
ISBN (Electronic)9781607688662, 9781607688686, 9781607688686, 9781607688693, 9781607688709, 9781607688716, 9781607688723
DOIs
StatePublished - 2019
Externally publishedYes
EventInternational Symposium on Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9 - 235th ECS Meeting - Dallas, United States
Duration: May 26 2019May 30 2019

Publication series

NameECS Transactions
Number3
Volume89
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceInternational Symposium on Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9 - 235th ECS Meeting
Country/TerritoryUnited States
CityDallas
Period5/26/195/30/19

ASJC Scopus subject areas

  • Engineering(all)

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