Selector-less graphite memristor: Intrinsic nonlinear behavior with gap design method for array applications

Ying Chen Chen, Yao Feng Chang, Jack C. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The memristors in binary metal oxide structures have attracted attentions since the current nonvolatile memory (NVM) has been approaching the scaling limit. Memristors having excellent scalability, high speed, and low power operation, is desired for current hardware needs and future artificial intelligence in-memory computational hardware platform. In high-density cross-bar array architecture, selector devices are essential to suppress the sneak path current and to avoid the reading errors. Despite that the additional selector device has commonly been proposed one selector-one resistor (1S1R) design for array applications, it rises the process complexity and cost. In this work, selectorless lR-only graphite-based memristor devices have been demonstrated by utilizing the nonlinear (NL) resistive switching (RS) characteristics with SET compliance and gap design method for memristor array applications.

Original languageEnglish (US)
Title of host publicationECS Transactions
EditorsR. Martinez-Duarte, A. M. Hoff, M. Madou, R. Martel, C. Wang, D. Landheer, M. T. Carter, R. M. Kostecki, O. M. Leonte
PublisherElectrochemical Society Inc.
Pages11-19
Number of pages9
Edition1
ISBN (Electronic)9781607688280
ISBN (Print)9781607688280
DOIs
StatePublished - 2018
Externally publishedYes
EventSymposium on Engineering Carbon Hybrids - Carbon Electronics 3 - 233rd ECS Meeting - Seattle, United States
Duration: May 13 2018May 17 2018

Publication series

NameECS Transactions
Number1
Volume85
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on Engineering Carbon Hybrids - Carbon Electronics 3 - 233rd ECS Meeting
Country/TerritoryUnited States
CitySeattle
Period5/13/185/17/18

ASJC Scopus subject areas

  • Engineering(all)

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