Selective layer disordering in intersubband Al0.028Ga0.972N/AlN superlattices with silicon nitride capping layer

Jonathan J. Wierer; Andrew A. Allerman; Erik J. Skogen; Anna Tauke-Pedretti; Gregory A. Vawter; Ines Montaño

doi:10.7567/APEX.8.061004

Selective layer disordering in intersubband Al_0.028Ga_0.972N/AlN superlattices with silicon nitride capping layer

Jonathan J. Wierer, Andrew A. Allerman, Erik J. Skogen, Anna Tauke-Pedretti, Gregory A. Vawter, Ines Montaño

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Selective layer disordering in an intersubband Al_0.028Ga_0.972N/AlN superlattice using a silicon nitride (SiN_x) capping layer is demonstrated. The SiN_x capped superlattice exhibits suppressed layer disordering under high-temperature annealing. Additionally, the rate of layer disordering is reduced with increased SiN_x thickness. The layer disordering is caused by Si diffusion, and the SiN_x layer inhibits vacancy formation at the crystal surface and ultimately, the movement of Al and Ga atoms across the heterointerfaces. Patterning of the SiN_x layer results in selective layer disordering, an attractive method to integrate active and passive III-nitride-based intersubband devices.

Original language	English (US)
Article number	061004
Journal	Applied Physics Express
Volume	8
Issue number	6
DOIs	https://doi.org/10.7567/APEX.8.061004
State	Published - Jun 1 2015
Externally published	Yes

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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title = "Selective layer disordering in intersubband Al0.028Ga0.972N/AlN superlattices with silicon nitride capping layer",

abstract = "Selective layer disordering in an intersubband Al0.028Ga0.972N/AlN superlattice using a silicon nitride (SiNx) capping layer is demonstrated. The SiNx capped superlattice exhibits suppressed layer disordering under high-temperature annealing. Additionally, the rate of layer disordering is reduced with increased SiNx thickness. The layer disordering is caused by Si diffusion, and the SiNx layer inhibits vacancy formation at the crystal surface and ultimately, the movement of Al and Ga atoms across the heterointerfaces. Patterning of the SiNx layer results in selective layer disordering, an attractive method to integrate active and passive III-nitride-based intersubband devices.",

author = "Wierer, {Jonathan J.} and Allerman, {Andrew A.} and Skogen, {Erik J.} and Anna Tauke-Pedretti and Vawter, {Gregory A.} and Ines Monta{\~n}o",

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doi = "10.7567/APEX.8.061004",

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AU - Wierer, Jonathan J.

AU - Allerman, Andrew A.

AU - Skogen, Erik J.

AU - Tauke-Pedretti, Anna

AU - Vawter, Gregory A.

AU - Montaño, Ines

PY - 2015/6/1

Y1 - 2015/6/1

N2 - Selective layer disordering in an intersubband Al0.028Ga0.972N/AlN superlattice using a silicon nitride (SiNx) capping layer is demonstrated. The SiNx capped superlattice exhibits suppressed layer disordering under high-temperature annealing. Additionally, the rate of layer disordering is reduced with increased SiNx thickness. The layer disordering is caused by Si diffusion, and the SiNx layer inhibits vacancy formation at the crystal surface and ultimately, the movement of Al and Ga atoms across the heterointerfaces. Patterning of the SiNx layer results in selective layer disordering, an attractive method to integrate active and passive III-nitride-based intersubband devices.

AB - Selective layer disordering in an intersubband Al0.028Ga0.972N/AlN superlattice using a silicon nitride (SiNx) capping layer is demonstrated. The SiNx capped superlattice exhibits suppressed layer disordering under high-temperature annealing. Additionally, the rate of layer disordering is reduced with increased SiNx thickness. The layer disordering is caused by Si diffusion, and the SiNx layer inhibits vacancy formation at the crystal surface and ultimately, the movement of Al and Ga atoms across the heterointerfaces. Patterning of the SiNx layer results in selective layer disordering, an attractive method to integrate active and passive III-nitride-based intersubband devices.

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Selective layer disordering in intersubband Al_0.028Ga_0.972N/AlN superlattices with silicon nitride capping layer

Abstract

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