Selective layer disordering in intersubband Al0.028Ga0.972N/AlN superlattices with silicon nitride capping layer

Jonathan J. Wierer, Andrew A. Allerman, Erik J. Skogen, Anna Tauke-Pedretti, Gregory A. Vawter, Ines Montaño

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Selective layer disordering in an intersubband Al0.028Ga0.972N/AlN superlattice using a silicon nitride (SiNx) capping layer is demonstrated. The SiNx capped superlattice exhibits suppressed layer disordering under high-temperature annealing. Additionally, the rate of layer disordering is reduced with increased SiNx thickness. The layer disordering is caused by Si diffusion, and the SiNx layer inhibits vacancy formation at the crystal surface and ultimately, the movement of Al and Ga atoms across the heterointerfaces. Patterning of the SiNx layer results in selective layer disordering, an attractive method to integrate active and passive III-nitride-based intersubband devices.

Original languageEnglish (US)
Article number061004
JournalApplied Physics Express
Volume8
Issue number6
DOIs
StatePublished - Jun 1 2015
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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