Resistive switching of SiOX with one diode-one resistor nanopillar architecture fabricated via nanosphere lithography

Li Ji; Yao Feng Chang; Burt Fowler; Ying Chen Chen; Tsung Ming Tsai; Kuan Chang Chang; Min Chen Chen; Ting Chang Chang; Simon M. Sze; Edward T. Yu; Jack C. Lee

doi:10.1109/DRC.2014.6872388

Resistive switching of SiOX with one diode-one resistor nanopillar architecture fabricated via nanosphere lithography

Li Ji
, Yao Feng Chang
, Burt Fowler
, Ying Chen Chen
, Tsung Ming Tsai
, Kuan Chang Chang
, Min Chen Chen
, Ting Chang Chang
, Simon M. Sze
, Edward T. Yu
, Jack C. Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Scopus citations

Abstract

Resistive random access memories (ReRAM) has attracted tremendous attention as a promising candidate for non-volatile memory. ReRAM can be classified into two categories: unipolar and bipolar memory. The advantage of unipolar memory is that it can be integrated into simple 1D-1R architecture with low static power consumption and constrained sneak-path issue. This is because unipolar memory does not require opposite voltage polarities for on/off switching [1]. SiO _x has long been used as gate dielectrics for MOSFET and recently proved to be an active unipolar ReRAM material [2, 3]. Here we report SiO _x-based 1D-1R high density nanopillar ReRAM via nanosphere lithography.

Original language	English (US)
Title of host publication	72nd Device Research Conference, DRC 2014 - Conference Digest
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	243-244
Number of pages	2
ISBN (Print)	9781479954056
DOIs	https://doi.org/10.1109/DRC.2014.6872388
State	Published - 2014
Externally published	Yes
Event	72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States Duration: Jun 22 2014 → Jun 25 2014

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Conference

Conference	72nd Device Research Conference, DRC 2014
Country/Territory	United States
City	Santa Barbara, CA
Period	6/22/14 → 6/25/14

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2014.6872388

Cite this

Ji, L., Chang, Y. F., Fowler, B., Chen, Y. C., Tsai, T. M., Chang, K. C., Chen, M. C., Chang, T. C., Sze, S. M., Yu, E. T., & Lee, J. C. (2014). Resistive switching of SiOX with one diode-one resistor nanopillar architecture fabricated via nanosphere lithography. In 72nd Device Research Conference, DRC 2014 - Conference Digest (pp. 243-244). Article 6872388 (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2014.6872388

Resistive switching of SiOX with one diode-one resistor nanopillar architecture fabricated via nanosphere lithography. / Ji, Li; Chang, Yao Feng; Fowler, Burt et al.
72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2014. p. 243-244 6872388 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ji, L, Chang, YF, Fowler, B, Chen, YC, Tsai, TM, Chang, KC, Chen, MC, Chang, TC, Sze, SM, Yu, ET & Lee, JC 2014, Resistive switching of SiOX with one diode-one resistor nanopillar architecture fabricated via nanosphere lithography. in 72nd Device Research Conference, DRC 2014 - Conference Digest., 6872388, Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., pp. 243-244, 72nd Device Research Conference, DRC 2014, Santa Barbara, CA, United States, 6/22/14. https://doi.org/10.1109/DRC.2014.6872388

Ji L, Chang YF, Fowler B, Chen YC, Tsai TM, Chang KC et al. Resistive switching of SiOX with one diode-one resistor nanopillar architecture fabricated via nanosphere lithography. In 72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc. 2014. p. 243-244. 6872388. (Device Research Conference - Conference Digest, DRC). doi: 10.1109/DRC.2014.6872388

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title = "Resistive switching of SiOX with one diode-one resistor nanopillar architecture fabricated via nanosphere lithography",

abstract = "Resistive random access memories (ReRAM) has attracted tremendous attention as a promising candidate for non-volatile memory. ReRAM can be classified into two categories: unipolar and bipolar memory. The advantage of unipolar memory is that it can be integrated into simple 1D-1R architecture with low static power consumption and constrained sneak-path issue. This is because unipolar memory does not require opposite voltage polarities for on/off switching [1]. SiO x has long been used as gate dielectrics for MOSFET and recently proved to be an active unipolar ReRAM material [2, 3]. Here we report SiO x-based 1D-1R high density nanopillar ReRAM via nanosphere lithography.",

author = "Li Ji and Chang, \{Yao Feng\} and Burt Fowler and Chen, \{Ying Chen\} and Tsai, \{Tsung Ming\} and Chang, \{Kuan Chang\} and Chen, \{Min Chen\} and Chang, \{Ting Chang\} and Sze, \{Simon M.\} and Yu, \{Edward T.\} and Lee, \{Jack C.\}",

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doi = "10.1109/DRC.2014.6872388",

language = "English (US)",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AB - Resistive random access memories (ReRAM) has attracted tremendous attention as a promising candidate for non-volatile memory. ReRAM can be classified into two categories: unipolar and bipolar memory. The advantage of unipolar memory is that it can be integrated into simple 1D-1R architecture with low static power consumption and constrained sneak-path issue. This is because unipolar memory does not require opposite voltage polarities for on/off switching [1]. SiO x has long been used as gate dielectrics for MOSFET and recently proved to be an active unipolar ReRAM material [2, 3]. Here we report SiO x-based 1D-1R high density nanopillar ReRAM via nanosphere lithography.

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Resistive switching of SiOX with one diode-one resistor nanopillar architecture fabricated via nanosphere lithography

Abstract

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