Resistive Switching Early Failure and Gap Identification in Bilayer Selectorless RRAM Applications

Ying Chen Chen, Szu Tung Hu, Chao Cheng Lin, Jack C. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Resistive random access memory (RRAM) using various metal oxides (i.e., SiO[1], HfO, NiO[2], AlO, TaO5 etc.) have attracted a great attention since the current nonvolatile memory (NVM) has been approaching the scaling limits. However, the sneak path current (SPC) is a main problem in crossbar memory configuration. The SPC significantly affects the read/write operation, because each word line is connected in perpendicular directions to the word line where the interference current from neighbor cells cannot be avoided in the crossbar configurations. In order to suppress the sneak path current in the array application, the transistor, diode, or selector device is designed to be integrated next to the memory cell for reducing the SPC. However, the additional selector device in the socalled 1T-1R or 1S-1R architecture (Fig. 1(a)) increases the cell size, process complexity, and cost. Therefore, the self-rectifying behavior i.e. nonlinear resistive switching (RS) in a 1R-only selectorless RRAM cell has been proposed [3]-[6]. However, the mechanisms in nonlinear characteristic and reliability properties are not yet been investigated. This work studies the reliability of early failure and relaxation properties using gap identification method.

Original languageEnglish (US)
Title of host publication2019 Device Research Conference, DRC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages89-90
Number of pages2
ISBN (Electronic)9781728121123
DOIs
StatePublished - Jun 2019
Externally publishedYes
Event2019 Device Research Conference, DRC 2019 - Ann Arbor, United States
Duration: Jun 23 2019Jun 26 2019

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2019-June
ISSN (Print)1548-3770

Conference

Conference2019 Device Research Conference, DRC 2019
Country/TerritoryUnited States
CityAnn Arbor
Period6/23/196/26/19

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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