Resistive switching characteristics and mechanisms in silicon oxide memory devices

Yao Feng Chang, Burt Fowler, Ying Chen Chen, Fei Zhou, Xiaohan Wu, Yen Ting Chen, Yanzhen Wang, Fei Xue, Jack C. Lee

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Intrinsic unipolar SiOx-based resistance random access memories (ReRAM) characterization, switching mechanisms, and applications have been investigated. Device structures, material compositions, and electrical characteristics are identified that enable ReRAM cells with high ON/OFF ratio, low static power consumption, low switching power, and high readout-margin using complementary metal-oxide semiconductor transistor (CMOS)-compatible SiOx-based materials. These ideas are combined with the use of horizontal and vertical device structure designs, composition optimization, electrical control, and external factors to help understand resistive switching (RS) mechanisms. Measured temperature effects, pulse response, and carrier transport behaviors lead to compact models of RS mechanisms and energy band diagrams in order to aid the development of computer-aided design for ultralarge-v scale integration. This chapter presents a comprehensive investigation of SiOx-based RS characteristics and mechanisms for the post-CMOS device era.

Original languageEnglish (US)
Article number20160011
JournalPhysical Sciences Reviews
Volume1
Issue number5
DOIs
StatePublished - 2019
Externally publishedYes

Keywords

  • proton exchange reaction
  • Resistive switching mechanism
  • silicon oxide

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

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