Keyphrases
Buffer Layer
14%
Bulk Silicon Substrate
100%
Capacitance-voltage Measurements
14%
Dislocation Defect
14%
Epitaxial Growth
100%
Epitaxial Layers
14%
Epitaxially Grown
14%
Germanium
100%
Graded Layer
100%
High Mobility
14%
High Vacuum Chemical Vapor Deposition
14%
High-mobility Channel
100%
Materials Characterization Techniques
14%
Metal-oxide-semiconductor Capacitor (MOSCAP)
14%
Mole Fraction
14%
MOSFET
100%
SiGe
28%
SiGe Layer
14%
Silicon Substrate
42%
Silicon-germanium
100%
Strained SiGe
14%
Strained Silicon
100%
Threading Dislocation
14%
Material Science
Buffer Layer
12%
Bulk Silicon
100%
Capacitance
12%
Capacitor
12%
Chemical Vapor Deposition
12%
Epitaxial Layer
12%
Epitaxy
100%
Film
12%
Germanium
100%
Materials Characterization Technique
12%
Metal Oxide
12%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Oxide Semiconductor
12%
Silicon
37%
Strained Silicon
100%
Engineering
Buffer Layer
20%
Bulk Silicon
100%
Chemical Vapor Deposition
20%
Defects
40%
Epitaxial Layer
20%
Graded Layer
100%
Metal Oxide Semiconductor
20%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Mole Fraction
20%
Silicon Substrate
100%
Threading Dislocation
20%
Vapor Deposition
20%