Pure germanium epitaxial growth on thin strained silicon-germanium graded layers on bulk silicon substrate for high-mobility channel metal-oxide- semiconductor field-effect transistors

S. Dey, S. Joshi, D. Garcia-Gutierrez, M. Chaumont, A. Campion, M. Jose-Yacaman, S. K. Banerjee

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Fingerprint

Dive into the research topics of 'Pure germanium epitaxial growth on thin strained silicon-germanium graded layers on bulk silicon substrate for high-mobility channel metal-oxide- semiconductor field-effect transistors'. Together they form a unique fingerprint.

Engineering & Materials Science

Chemical Compounds

Physics & Astronomy