Pure germanium epitaxial growth on thin strained silicon-germanium graded layers on bulk silicon substrate for high-mobility channel metal-oxide- semiconductor field-effect transistors

S. Dey, S. Joshi, D. Garcia-Gutierrez, M. Chaumont, A. Campion, M. Jose-Yacaman, S. K. Banerjee

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

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