Keyphrases
Charge Transport
50%
Charging Potential
25%
Conductance
50%
Defect Concentration
25%
Device Switching
25%
Electroforming
25%
Electron Hopping
25%
Energy Barrier
25%
Forward-backward
25%
High Resistance State
25%
High-temperature Reliability
25%
Hop Distance
25%
Hopping Model
25%
Impedance Spectroscopy
100%
Linearly Dependent
25%
Low Resistance
25%
Memory Application
25%
Non-volatile Memory
25%
Operating Speed
25%
Physical Parameters
25%
Polaron Hopping
50%
Proton Exchange Reaction
100%
Resistance Resistance
25%
Resistive Random Access Memory (ReRAM)
100%
Resistive State
25%
SiOx
100%
Switching Mechanism
50%
Switching Performance
25%
Temperature Range
25%
Temperature-independent
25%
Uniform Switching
25%
Engineering
Charge Transport
50%
Defects
50%
Electroforming
25%
Energy Barrier
25%
Exchange Reaction
100%
High Resistance State
25%
Hopping Model
25%
Nonvolatile Memory
25%
Operating Speed
25%
Physical Parameter
25%
Resistive
100%
Temperature Range
25%
Physics
Polaron
100%
Resistive Switching
100%
Material Science
Dielectric Spectroscopy
100%
Switch
33%