Nonlinearity enhancement by positive pulse stress in multilevel cell selectorless RRAM applications

Ying Chen Chen, Xiaohan Wu, Yao Feng Chang, Jack C. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Resistive random access memory (RRAM) using various metal oxides (i.e., SiO2[1], HfO2, NiO[2], Al2O3, NbO) have attracted a great deal of attention since the current nonvolatile memory (NVM) has been approaching the scaling limits. Meanwhile, the undesired sneak current through neighboring unselected cells deteriorates the read margin and limits the maximum size of a crossbar array (i.e. read margin ~ 10%) [3]-[4]. And the selector devices have been used to resolve the sneak path current issue. However, the additional selector device in the so-called 1S-1R architecture (i.e. one selector-one resistor -Fig. 1 (a)) increases the cell size, process complexity, and cost. In this work, a nonlinear (NL) resistive switching (RS) in a multilevel lR-only selectorless RRAM cell has been demonstrated by using a graphite-based stacked RRAM device.

Original languageEnglish (US)
Title of host publication2018 76th Device Research Conference, DRC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781538630280
StatePublished - Aug 20 2018
Externally publishedYes
Event76th Device Research Conference, DRC 2018 - Santa Barbara, United States
Duration: Jun 24 2018Jun 27 2018

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Conference76th Device Research Conference, DRC 2018
Country/TerritoryUnited States
CitySanta Barbara

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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