TY - JOUR
T1 - MRAM Devices to Design Ternary Addressable Physically Unclonable Functions
AU - Aguilar Rios, Manuel
AU - Alam, Mahafujul
AU - Cambou, Bertrand
N1 - Funding Information:
The authors would like to thank Everspin Technologies Inc. for their support in supplying the MRAM devices and the instructions on how to access the MRAM cells directly. The research was sponsored by the Army Research Laboratory and was accomplished under Cooperative Agreement Number W911NF-23-2-0014. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the Army Research Laboratory or the U.S. Government. The U.S. Government is authorized to reproduce and distribute reprints for Government purposes notwithstanding any copyright notation herein.
Publisher Copyright:
© 2023 by the authors.
PY - 2023/8
Y1 - 2023/8
N2 - We introduce a novel approach to constructing ternary addressable physically unclonable functions (TAPUFs) using magnetoresistive random-access memory (MRAM) devices. TAPUFs use three states (1, 0, and X) to track unstable cells. The proposed TAPUF leverages the resistance properties of MRAM cells to produce unique digital fingerprints that can be effectively utilized in cryptographic protocols. We exploit the cell-to-cell variations in resistance values to generate reliable cryptographic keys and true random numbers, which can add protection against certain attacks. To evaluate the performance of the TAPUF, various tests were conducted, including assessments of inter-cell to intra-cell variation, inter-distance, bit error rate (BER), and temperature variation. These experiments were conducted using a low-power client device to replicate practical scenarios. The obtained results demonstrate that the proposed TAPUF exhibits exceptional scalability, energy efficiency, and reliability.
AB - We introduce a novel approach to constructing ternary addressable physically unclonable functions (TAPUFs) using magnetoresistive random-access memory (MRAM) devices. TAPUFs use three states (1, 0, and X) to track unstable cells. The proposed TAPUF leverages the resistance properties of MRAM cells to produce unique digital fingerprints that can be effectively utilized in cryptographic protocols. We exploit the cell-to-cell variations in resistance values to generate reliable cryptographic keys and true random numbers, which can add protection against certain attacks. To evaluate the performance of the TAPUF, various tests were conducted, including assessments of inter-cell to intra-cell variation, inter-distance, bit error rate (BER), and temperature variation. These experiments were conducted using a low-power client device to replicate practical scenarios. The obtained results demonstrate that the proposed TAPUF exhibits exceptional scalability, energy efficiency, and reliability.
KW - authentication
KW - cryptographic schemes
KW - low power
KW - magnetoresistive random access memory (MRAM)
KW - memory array components
KW - non-volatile
KW - physically unclonable function (PUF)
KW - ternary states
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U2 - 10.3390/electronics12153308
DO - 10.3390/electronics12153308
M3 - Article
AN - SCOPUS:85167840443
SN - 2079-9292
VL - 12
JO - Electronics (Switzerland)
JF - Electronics (Switzerland)
IS - 15
M1 - 3308
ER -