Abstract
Presently, GaN quantum-dots were prepared using a novel synthetic route. GaN quantum dots were imbedded in a poly(methyl methacrylate) thin film matrix (GaN/PMMA) and then studied from structural and optical point of views. X-ray powder diffraction and high-resolution transmission electron microscopy were performed to analyze the microstructure while the optical properties were measured by optical absorption and photoluminescence. Microstructural analyses showed that the GaN nanocrystallites imbedded in the PMMA matrix have an average size of about 5.5 nm and crystallize in the zinc blende lattice (lattice constant a close to 0.45 nm) with a considerable fraction of structural defects such as nitrogen vacancies and stacking faults. Optical absorption measurements indicate that the band gap energy of the GaN/PMMA composite is approximately 3.51 eV.
Original language | English (US) |
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Pages | 221-226 |
Number of pages | 6 |
State | Published - 1997 |
Externally published | Yes |
Event | Proceedings of the 1997 TMS Annual Meeting - Orlando, FL, USA Duration: Feb 9 1997 → Feb 13 1997 |
Conference
Conference | Proceedings of the 1997 TMS Annual Meeting |
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City | Orlando, FL, USA |
Period | 2/9/97 → 2/13/97 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Mechanics of Materials
- Metals and Alloys