Microstructure and optical properties of GaN quantum dots imbedded in a PMMA thin film

M. Benaissa, M. Jose-Yacaman, K. E. Gonsalves

Research output: Contribution to conferencePaperpeer-review


Presently, GaN quantum-dots were prepared using a novel synthetic route. GaN quantum dots were imbedded in a poly(methyl methacrylate) thin film matrix (GaN/PMMA) and then studied from structural and optical point of views. X-ray powder diffraction and high-resolution transmission electron microscopy were performed to analyze the microstructure while the optical properties were measured by optical absorption and photoluminescence. Microstructural analyses showed that the GaN nanocrystallites imbedded in the PMMA matrix have an average size of about 5.5 nm and crystallize in the zinc blende lattice (lattice constant a close to 0.45 nm) with a considerable fraction of structural defects such as nitrogen vacancies and stacking faults. Optical absorption measurements indicate that the band gap energy of the GaN/PMMA composite is approximately 3.51 eV.

Original languageEnglish (US)
Number of pages6
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 TMS Annual Meeting - Orlando, FL, USA
Duration: Feb 9 1997Feb 13 1997


ConferenceProceedings of the 1997 TMS Annual Meeting
CityOrlando, FL, USA

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys


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