Memcomputing (Memristor + Computing) in Intrinsic SiOx-Based Resistive Switching Memory: Arithmetic Operations for Logic Applications

Yao Feng Chang; Fei Zhou; Burt W. Fowler; Ying Chen Chen; Cheng Chih Hsieh; Lauren Guckert; Earl E. Swartzlander; Jack C. Lee

doi:10.1109/TED.2017.2699679

Memcomputing (Memristor + Computing) in Intrinsic SiO_x-Based Resistive Switching Memory: Arithmetic Operations for Logic Applications

Yao Feng Chang, Fei Zhou, Burt W. Fowler, Ying Chen Chen, Cheng Chih Hsieh, Lauren Guckert, Earl E. Swartzlander, Jack C. Lee

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

In this paper, implication (IMP) operations are demonstrated in a circuit with two SiO_x-based memristors and a CMOS transistor. Specifically, a circuit with two one-diode and one-resistor (1D1R) memory elements and a transistor are designed to perform the IMP operations. A circuit consisting of a $4 \times 4$ crossbar 1D1R memristor array together with selection transistors is proposed and used to realize the functionality of a one-bit, full adder in 43 steps. Compared with CMOS logic circuits, the advantages and disadvantages of memristor-enabled logic circuits are discussed. This result suggests that the memristor-enabled logic circuit is most suitable for low-power and high-density applications, as well as a simple and robust approach to realize programmable memcomputing chips compatible with large-scale CMOS manufacturing technology.

Original language	English (US)
Article number	7926406
Pages (from-to)	2977-2983
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	7
DOIs	https://doi.org/10.1109/TED.2017.2699679
State	Published - Jul 2017
Externally published	Yes

Keywords

Implication
logic applications
memristor
resistive switching
silicon oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2017.2699679

Cite this

Chang, Y. F., Zhou, F., Fowler, B. W., Chen, Y. C., Hsieh, C. C., Guckert, L., Swartzlander, E. E., & Lee, J. C. (2017). Memcomputing (Memristor + Computing) in Intrinsic SiO_x-Based Resistive Switching Memory: Arithmetic Operations for Logic Applications. IEEE Transactions on Electron Devices, 64(7), 2977-2983. Article 7926406. https://doi.org/10.1109/TED.2017.2699679

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abstract = "In this paper, implication (IMP) operations are demonstrated in a circuit with two SiOx-based memristors and a CMOS transistor. Specifically, a circuit with two one-diode and one-resistor (1D1R) memory elements and a transistor are designed to perform the IMP operations. A circuit consisting of a $4 \times 4$ crossbar 1D1R memristor array together with selection transistors is proposed and used to realize the functionality of a one-bit, full adder in 43 steps. Compared with CMOS logic circuits, the advantages and disadvantages of memristor-enabled logic circuits are discussed. This result suggests that the memristor-enabled logic circuit is most suitable for low-power and high-density applications, as well as a simple and robust approach to realize programmable memcomputing chips compatible with large-scale CMOS manufacturing technology.",

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AB - In this paper, implication (IMP) operations are demonstrated in a circuit with two SiOx-based memristors and a CMOS transistor. Specifically, a circuit with two one-diode and one-resistor (1D1R) memory elements and a transistor are designed to perform the IMP operations. A circuit consisting of a $4 \times 4$ crossbar 1D1R memristor array together with selection transistors is proposed and used to realize the functionality of a one-bit, full adder in 43 steps. Compared with CMOS logic circuits, the advantages and disadvantages of memristor-enabled logic circuits are discussed. This result suggests that the memristor-enabled logic circuit is most suitable for low-power and high-density applications, as well as a simple and robust approach to realize programmable memcomputing chips compatible with large-scale CMOS manufacturing technology.

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