Memcomputing (Memristor + Computing) in Intrinsic SiOx-Based Resistive Switching Memory: Arithmetic Operations for Logic Applications

Yao Feng Chang, Fei Zhou, Burt W. Fowler, Ying Chen Chen, Cheng Chih Hsieh, Lauren Guckert, Earl E. Swartzlander, Jack C. Lee

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

In this paper, implication (IMP) operations are demonstrated in a circuit with two SiOx-based memristors and a CMOS transistor. Specifically, a circuit with two one-diode and one-resistor (1D1R) memory elements and a transistor are designed to perform the IMP operations. A circuit consisting of a $4 \times 4$ crossbar 1D1R memristor array together with selection transistors is proposed and used to realize the functionality of a one-bit, full adder in 43 steps. Compared with CMOS logic circuits, the advantages and disadvantages of memristor-enabled logic circuits are discussed. This result suggests that the memristor-enabled logic circuit is most suitable for low-power and high-density applications, as well as a simple and robust approach to realize programmable memcomputing chips compatible with large-scale CMOS manufacturing technology.

Original languageEnglish (US)
Article number7926406
Pages (from-to)2977-2983
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume64
Issue number7
DOIs
StatePublished - Jul 2017
Externally publishedYes

Keywords

  • Implication
  • logic applications
  • memristor
  • resistive switching
  • silicon oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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