Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application

Ying Chen Chen; Chih Yang Lin; Hui Chun Huang; Sungjun Kim; Burt Fowler; Yao Feng Chang; Xiaohan Wu; Gaobo Xu; Ting Chang Chang; Jack C. Lee

doi:10.1088/1361-6463/aaa1b9

Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application

Ying Chen Chen, Chih Yang Lin, Hui Chun Huang, Sungjun Kim, Burt Fowler, Yao Feng Chang, Xiaohan Wu, Gaobo Xu, Ting Chang Chang, Jack C. Lee

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Sneak path current is a severe hindrance for the application of high-density resistive random-access memory (RRAM) array designs. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of a HfO_x/SiO_x-based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing the internal filament location with a low effective dielectric constant in the HfO_x/SiO_x structure. The stacking HfO_x/SiO_x-based RRAM device as the one-resistor-only memory cell is applicable without needing an additional selector device to solve the sneak path issue with a switching voltage of ∼1 V, which is desirable for low-power operating in built-in nonlinearity crossbar array configurations.

Original language	English (US)
Article number	055108
Journal	Journal Physics D: Applied Physics
Volume	51
Issue number	5
DOIs	https://doi.org/10.1088/1361-6463/aaa1b9
State	Published - Jan 16 2018
Externally published	Yes

Keywords

nonlinear
resistive switching
selector-less
silicon dioxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/1361-6463/aaa1b9

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title = "Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application",

abstract = "Sneak path current is a severe hindrance for the application of high-density resistive random-access memory (RRAM) array designs. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of a HfOx/SiOx-based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing the internal filament location with a low effective dielectric constant in the HfOx/SiOx structure. The stacking HfOx/SiOx-based RRAM device as the one-resistor-only memory cell is applicable without needing an additional selector device to solve the sneak path issue with a switching voltage of ∼1 V, which is desirable for low-power operating in built-in nonlinearity crossbar array configurations.",

keywords = "nonlinear, resistive switching, selector-less, silicon dioxide",

author = "Chen, {Ying Chen} and Lin, {Chih Yang} and Huang, {Hui Chun} and Sungjun Kim and Burt Fowler and Chang, {Yao Feng} and Xiaohan Wu and Gaobo Xu and Chang, {Ting Chang} and Lee, {Jack C.}",

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T1 - Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application

AU - Chen, Ying Chen

AU - Lin, Chih Yang

AU - Huang, Hui Chun

AU - Kim, Sungjun

AU - Fowler, Burt

AU - Chang, Yao Feng

AU - Wu, Xiaohan

AU - Xu, Gaobo

AU - Chang, Ting Chang

AU - Lee, Jack C.

PY - 2018/1/16

Y1 - 2018/1/16

N2 - Sneak path current is a severe hindrance for the application of high-density resistive random-access memory (RRAM) array designs. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of a HfOx/SiOx-based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing the internal filament location with a low effective dielectric constant in the HfOx/SiOx structure. The stacking HfOx/SiOx-based RRAM device as the one-resistor-only memory cell is applicable without needing an additional selector device to solve the sneak path issue with a switching voltage of ∼1 V, which is desirable for low-power operating in built-in nonlinearity crossbar array configurations.

AB - Sneak path current is a severe hindrance for the application of high-density resistive random-access memory (RRAM) array designs. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of a HfOx/SiOx-based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing the internal filament location with a low effective dielectric constant in the HfOx/SiOx structure. The stacking HfOx/SiOx-based RRAM device as the one-resistor-only memory cell is applicable without needing an additional selector device to solve the sneak path issue with a switching voltage of ∼1 V, which is desirable for low-power operating in built-in nonlinearity crossbar array configurations.

KW - nonlinear

KW - resistive switching

KW - selector-less

KW - silicon dioxide

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Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application

Abstract

Keywords

ASJC Scopus subject areas

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