Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application

Ying Chen Chen, Chih Yang Lin, Hui Chun Huang, Sungjun Kim, Burt Fowler, Yao Feng Chang, Xiaohan Wu, Gaobo Xu, Ting Chang Chang, Jack C. Lee

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Sneak path current is a severe hindrance for the application of high-density resistive random-access memory (RRAM) array designs. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of a HfOx/SiOx-based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing the internal filament location with a low effective dielectric constant in the HfOx/SiOx structure. The stacking HfOx/SiOx-based RRAM device as the one-resistor-only memory cell is applicable without needing an additional selector device to solve the sneak path issue with a switching voltage of ∼1 V, which is desirable for low-power operating in built-in nonlinearity crossbar array configurations.

Original languageEnglish (US)
Article number055108
JournalJournal Physics D: Applied Physics
Volume51
Issue number5
DOIs
StatePublished - Jan 16 2018
Externally publishedYes

Keywords

  • nonlinear
  • resistive switching
  • selector-less
  • silicon dioxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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