Integrated one diode-one resistor architecture in nanopillar SiO x resistive switching memory by nanosphere lithography

Li Ji; Yao Feng Chang; Burt Fowler; Ying Chen Chen; Tsung Ming Tsai; Kuan Chang Chang; Min Chen Chen; Ting Chang Chang; Simon M. Sze; Edward T. Yu; Jack C. Lee

doi:10.1021/nl404160u

Integrated one diode-one resistor architecture in nanopillar SiO _x resistive switching memory by nanosphere lithography

Li Ji
, Yao Feng Chang
, Burt Fowler
, Ying Chen Chen
, Tsung Ming Tsai
, Kuan Chang Chang
, Min Chen Chen
, Ting Chang Chang
, Simon M. Sze
, Edward T. Yu
, Jack C. Lee

Research output: Contribution to journal › Article › peer-review

108 Scopus citations

Abstract

We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiO_x-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiO_x-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.

Original language	English (US)
Pages (from-to)	813-818
Number of pages	6
Journal	Nano Letters
Volume	14
Issue number	2
DOIs	https://doi.org/10.1021/nl404160u
State	Published - Feb 12 2014
Externally published	Yes

Keywords

1D-1R
Nanosphere Lithography
ReRAM
SiO
nanopillar

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

Access to Document

10.1021/nl404160u

Cite this

@article{ecaf7a5f60ee483286a1bd881bad52ad,

title = "Integrated one diode-one resistor architecture in nanopillar SiO x resistive switching memory by nanosphere lithography",

abstract = "We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.",

keywords = "1D-1R, Nanosphere Lithography, ReRAM, SiO, nanopillar",

author = "Li Ji and Chang, \{Yao Feng\} and Burt Fowler and Chen, \{Ying Chen\} and Tsai, \{Tsung Ming\} and Chang, \{Kuan Chang\} and Chen, \{Min Chen\} and Chang, \{Ting Chang\} and Sze, \{Simon M.\} and Yu, \{Edward T.\} and Lee, \{Jack C.\}",

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AU - Ji, Li

AU - Chang, Yao Feng

AU - Fowler, Burt

AU - Chen, Ying Chen

AU - Tsai, Tsung Ming

AU - Chang, Kuan Chang

AU - Chen, Min Chen

AU - Chang, Ting Chang

AU - Sze, Simon M.

AU - Yu, Edward T.

AU - Lee, Jack C.

PY - 2014/2/12

Y1 - 2014/2/12

N2 - We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.

AB - We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.

KW - 1D-1R

KW - Nanosphere Lithography

KW - ReRAM

KW - SiO

KW - nanopillar

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