Integrated one diode-one resistor architecture in nanopillar SiO x resistive switching memory by nanosphere lithography

Li Ji; Yao Feng Chang; Burt Fowler; Ying Chen Chen; Tsung Ming Tsai; Kuan Chang Chang; Min Chen Chen; Ting Chang Chang; Simon M. Sze; Edward T. Yu; Jack C. Lee

doi:10.1021/nl404160u

Integrated one diode-one resistor architecture in nanopillar SiO _x resistive switching memory by nanosphere lithography

Li Ji, Yao Feng Chang, Burt Fowler, Ying Chen Chen, Tsung Ming Tsai, Kuan Chang Chang, Min Chen Chen, Ting Chang Chang, Simon M. Sze, Edward T. Yu, Jack C. Lee

Research output: Contribution to journal › Article › peer-review

108 Scopus citations

Abstract

We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiO_x-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiO_x-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.

Original language	English (US)
Pages (from-to)	813-818
Number of pages	6
Journal	Nano Letters
Volume	14
Issue number	2
DOIs	https://doi.org/10.1021/nl404160u
State	Published - Feb 12 2014
Externally published	Yes

Keywords

1D-1R
Nanosphere Lithography
ReRAM
SiO
nanopillar

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

Access to Document

10.1021/nl404160u

Cite this

@article{ecaf7a5f60ee483286a1bd881bad52ad,

title = "Integrated one diode-one resistor architecture in nanopillar SiO x resistive switching memory by nanosphere lithography",

abstract = "We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.",

keywords = "1D-1R, Nanosphere Lithography, ReRAM, SiO, nanopillar",

author = "Li Ji and Chang, \{Yao Feng\} and Burt Fowler and Chen, \{Ying Chen\} and Tsai, \{Tsung Ming\} and Chang, \{Kuan Chang\} and Chen, \{Min Chen\} and Chang, \{Ting Chang\} and Sze, \{Simon M.\} and Yu, \{Edward T.\} and Lee, \{Jack C.\}",

year = "2014",

month = feb,

day = "12",

doi = "10.1021/nl404160u",

language = "English (US)",

volume = "14",

pages = "813--818",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "2",

}

TY - JOUR

T1 - Integrated one diode-one resistor architecture in nanopillar SiO x resistive switching memory by nanosphere lithography

AU - Ji, Li

AU - Chang, Yao Feng

AU - Fowler, Burt

AU - Chen, Ying Chen

AU - Tsai, Tsung Ming

AU - Chang, Kuan Chang

AU - Chen, Min Chen

AU - Chang, Ting Chang

AU - Sze, Simon M.

AU - Yu, Edward T.

AU - Lee, Jack C.

PY - 2014/2/12

Y1 - 2014/2/12

N2 - We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.

AB - We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.

KW - 1D-1R

KW - Nanosphere Lithography

KW - ReRAM

KW - SiO

KW - nanopillar

UR - https://www.scopus.com/pages/publications/84894139082

UR - https://www.scopus.com/inward/citedby.url?scp=84894139082&partnerID=8YFLogxK

U2 - 10.1021/nl404160u

DO - 10.1021/nl404160u

M3 - Article

AN - SCOPUS:84894139082

SN - 1530-6984

VL - 14

SP - 813

EP - 818

JO - Nano Letters

JF - Nano Letters

IS - 2

ER -