Integrated one diode-one resistor architecture in nanopillar SiO x resistive switching memory by nanosphere lithography

Li Ji, Yao Feng Chang, Burt Fowler, Ying Chen Chen, Tsung Ming Tsai, Kuan Chang Chang, Min Chen Chen, Ting Chang Chang, Simon M. Sze, Edward T. Yu, Jack C. Lee

Research output: Contribution to journalArticlepeer-review

92 Scopus citations

Abstract

We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.

Original languageEnglish (US)
Pages (from-to)813-818
Number of pages6
JournalNano Letters
Volume14
Issue number2
DOIs
StatePublished - Feb 12 2014
Externally publishedYes

Keywords

  • 1D-1R
  • nanopillar
  • Nanosphere Lithography
  • ReRAM
  • SiO

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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