Incorporation of polyhedral oligosilsesquioxane in chemically amplified resists to improve their reactive ion etching resistance

Keyphrases

• Polyhedral Oligomeric Silsesquioxane 100%
• Chemically Amplified Resist 100%
• Etching Resistance 100%
• Reactive Ion Etching 100%
• Silica 33%
• High-resolution Transmission Electron Microscopy (HRTEM) 33%
• Crystallites 33%
• Isobutyronitrile 33%
• Methacrylate 33%
• Radical Polymerization 33%
• Chemically Amplified 33%
• Carbon-to-hydrogen Ratio 33%

Material Science

• Reactive Ion Etching 100%
• Silicon Dioxide 33%
• High-Resolution Transmission Electron Microscopy 33%
• Crystallite 33%
• Free Radical Polymerization 33%