Incorporation of polyhedral oligosilsesquioxane in chemically amplified resists to improve their reactive ion etching resistance

Hengpeng Wu; Yongqi Hu; Kenneth E. Gonsalves; Miguel Jose Yacaman

doi:10.1116/1.1368672

Incorporation of polyhedral oligosilsesquioxane in chemically amplified resists to improve their reactive ion etching resistance

Hengpeng Wu
, Yongqi Hu
, Kenneth E. Gonsalves
, Miguel Jose Yacaman

Research output: Contribution to journal › Conference article › peer-review

30 Scopus citations

Abstract

The synthesis of a chemically amplified (CA) methacrylate resist containing polyhedral oligosilsesquioxane (POSS) using α,α-aziobis(isobutyronitrile) (AIBN)-initiated free radical polymerization was described. The etching stability of a polymer was found to be closely related to its carbon-to-hydrogen ratio. An improvement in reactive ion etching (RIE) resistance was observed for the polymer of low POSS concentrations. High-resolution transmission electron microscopy revealed that the formation of rectangular crystallite-constituting networks of the silica cages was responsible for the improvement in RIE resistance.

Original language	English (US)
Pages (from-to)	851-855
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	3
DOIs	https://doi.org/10.1116/1.1368672
State	Published - May 2001
Externally published	Yes
Event	13th International Vaccum Microelectronics Conference - Guangzhou, China Duration: Aug 14 2000 → Aug 17 2000

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.1368672

Cite this

Incorporation of polyhedral oligosilsesquioxane in chemically amplified resists to improve their reactive ion etching resistance. / Wu, Hengpeng; Hu, Yongqi; Gonsalves, Kenneth E. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 3, 05.2001, p. 851-855.

Research output: Contribution to journal › Conference article › peer-review

@article{db00d6470af5406ca4ab26577df11dd9,

title = "Incorporation of polyhedral oligosilsesquioxane in chemically amplified resists to improve their reactive ion etching resistance",

abstract = "The synthesis of a chemically amplified (CA) methacrylate resist containing polyhedral oligosilsesquioxane (POSS) using α,α-aziobis(isobutyronitrile) (AIBN)-initiated free radical polymerization was described. The etching stability of a polymer was found to be closely related to its carbon-to-hydrogen ratio. An improvement in reactive ion etching (RIE) resistance was observed for the polymer of low POSS concentrations. High-resolution transmission electron microscopy revealed that the formation of rectangular crystallite-constituting networks of the silica cages was responsible for the improvement in RIE resistance.",

author = "Hengpeng Wu and Yongqi Hu and Gonsalves, \{Kenneth E.\} and Yacaman, \{Miguel Jose\}",

year = "2001",

month = may,

doi = "10.1116/1.1368672",

language = "English (US)",

volume = "19",

pages = "851--855",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

note = "13th International Vaccum Microelectronics Conference ; Conference date: 14-08-2000 Through 17-08-2000",

}

TY - JOUR

T1 - Incorporation of polyhedral oligosilsesquioxane in chemically amplified resists to improve their reactive ion etching resistance

AU - Wu, Hengpeng

AU - Hu, Yongqi

AU - Gonsalves, Kenneth E.

AU - Yacaman, Miguel Jose

PY - 2001/5

Y1 - 2001/5

N2 - The synthesis of a chemically amplified (CA) methacrylate resist containing polyhedral oligosilsesquioxane (POSS) using α,α-aziobis(isobutyronitrile) (AIBN)-initiated free radical polymerization was described. The etching stability of a polymer was found to be closely related to its carbon-to-hydrogen ratio. An improvement in reactive ion etching (RIE) resistance was observed for the polymer of low POSS concentrations. High-resolution transmission electron microscopy revealed that the formation of rectangular crystallite-constituting networks of the silica cages was responsible for the improvement in RIE resistance.

AB - The synthesis of a chemically amplified (CA) methacrylate resist containing polyhedral oligosilsesquioxane (POSS) using α,α-aziobis(isobutyronitrile) (AIBN)-initiated free radical polymerization was described. The etching stability of a polymer was found to be closely related to its carbon-to-hydrogen ratio. An improvement in reactive ion etching (RIE) resistance was observed for the polymer of low POSS concentrations. High-resolution transmission electron microscopy revealed that the formation of rectangular crystallite-constituting networks of the silica cages was responsible for the improvement in RIE resistance.

UR - https://www.scopus.com/pages/publications/0035326283

UR - https://www.scopus.com/pages/publications/0035326283#tab=citedBy

U2 - 10.1116/1.1368672

DO - 10.1116/1.1368672

M3 - Conference article

AN - SCOPUS:0035326283

SN - 1071-1023

VL - 19

SP - 851

EP - 855

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

T2 - 13th International Vaccum Microelectronics Conference

Y2 - 14 August 2000 through 17 August 2000

ER -

Incorporation of polyhedral oligosilsesquioxane in chemically amplified resists to improve their reactive ion etching resistance

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this