Incorporation of polyhedral oligosilsesquioxane in chemically amplified resists to improve their reactive ion etching resistance

Hengpeng Wu; Yongqi Hu; Kenneth E. Gonsalves; Miguel Jose Yacaman

doi:10.1116/1.1368672

Incorporation of polyhedral oligosilsesquioxane in chemically amplified resists to improve their reactive ion etching resistance

Hengpeng Wu, Yongqi Hu, Kenneth E. Gonsalves, Miguel Jose Yacaman

Research output: Contribution to journal › Conference article › peer-review

30 Scopus citations

Abstract

The synthesis of a chemically amplified (CA) methacrylate resist containing polyhedral oligosilsesquioxane (POSS) using α,α-aziobis(isobutyronitrile) (AIBN)-initiated free radical polymerization was described. The etching stability of a polymer was found to be closely related to its carbon-to-hydrogen ratio. An improvement in reactive ion etching (RIE) resistance was observed for the polymer of low POSS concentrations. High-resolution transmission electron microscopy revealed that the formation of rectangular crystallite-constituting networks of the silica cages was responsible for the improvement in RIE resistance.

Original language	English (US)
Pages (from-to)	851-855
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	3
DOIs	https://doi.org/10.1116/1.1368672
State	Published - May 2001
Externally published	Yes
Event	13th International Vaccum Microelectronics Conference - Guangzhou, China Duration: Aug 14 2000 → Aug 17 2000

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1368672

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Incorporation of polyhedral oligosilsesquioxane in chemically amplified resists to improve their reactive ion etching resistance. / Wu, Hengpeng; Hu, Yongqi; Gonsalves, Kenneth E. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 3, 05.2001, p. 851-855.

Research output: Contribution to journal › Conference article › peer-review

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abstract = "The synthesis of a chemically amplified (CA) methacrylate resist containing polyhedral oligosilsesquioxane (POSS) using α,α-aziobis(isobutyronitrile) (AIBN)-initiated free radical polymerization was described. The etching stability of a polymer was found to be closely related to its carbon-to-hydrogen ratio. An improvement in reactive ion etching (RIE) resistance was observed for the polymer of low POSS concentrations. High-resolution transmission electron microscopy revealed that the formation of rectangular crystallite-constituting networks of the silica cages was responsible for the improvement in RIE resistance.",

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AU - Yacaman, Miguel Jose

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N2 - The synthesis of a chemically amplified (CA) methacrylate resist containing polyhedral oligosilsesquioxane (POSS) using α,α-aziobis(isobutyronitrile) (AIBN)-initiated free radical polymerization was described. The etching stability of a polymer was found to be closely related to its carbon-to-hydrogen ratio. An improvement in reactive ion etching (RIE) resistance was observed for the polymer of low POSS concentrations. High-resolution transmission electron microscopy revealed that the formation of rectangular crystallite-constituting networks of the silica cages was responsible for the improvement in RIE resistance.

AB - The synthesis of a chemically amplified (CA) methacrylate resist containing polyhedral oligosilsesquioxane (POSS) using α,α-aziobis(isobutyronitrile) (AIBN)-initiated free radical polymerization was described. The etching stability of a polymer was found to be closely related to its carbon-to-hydrogen ratio. An improvement in reactive ion etching (RIE) resistance was observed for the polymer of low POSS concentrations. High-resolution transmission electron microscopy revealed that the formation of rectangular crystallite-constituting networks of the silica cages was responsible for the improvement in RIE resistance.

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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Incorporation of polyhedral oligosilsesquioxane in chemically amplified resists to improve their reactive ion etching resistance

Abstract

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