TY - JOUR
T1 - Hyperthermal collisions of silicon clusters with solid surfaces
AU - St. John, Pamela M.
AU - Whetten, Robert L.
N1 - Funding Information:
The authors are indebted to R.D. Beck and C. Yeretzian for technical advice, to E.C. Honea and M.F. Jarrold for information on Si + energetics and reactivity and for a preprint of ref. \[1 2 \], to M. A1-ford and R.E. Smalley for information on Si~ (ref. \[26\]), to W. Andreoni for stimulating discussions on silicon cluster structure and a preprint of ref. \[1 6 \], and to R.S. Williams and D. Baugh for discussions of cluster-surface scattering. This work was supported by the Office of Naval Research and by a Packard Foundation Fellowship.
PY - 1992/8/14
Y1 - 1992/8/14
N2 - High yields of intact scattering are found for collisions of mass-selected Si±N clusters (N=5-24) against graphite and silicon surfaces, at impact energies of 0.5-10 eV/atom. This result indicates an unanticipated difficulty in forming bonds during the impact event. The reflected cluster fragments or emits an electron in patterns consistent with gas-phase energetics, and analysis of fragmentation rates specifies an internal energy content of 12-26 percent of the impact energy, depending on cluster size, the surface, and surface temperature. Reactive processes, such as sticking or adhesion, may still dominate at lowest and highest energies.
AB - High yields of intact scattering are found for collisions of mass-selected Si±N clusters (N=5-24) against graphite and silicon surfaces, at impact energies of 0.5-10 eV/atom. This result indicates an unanticipated difficulty in forming bonds during the impact event. The reflected cluster fragments or emits an electron in patterns consistent with gas-phase energetics, and analysis of fragmentation rates specifies an internal energy content of 12-26 percent of the impact energy, depending on cluster size, the surface, and surface temperature. Reactive processes, such as sticking or adhesion, may still dominate at lowest and highest energies.
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U2 - 10.1016/0009-2614(92)85977-I
DO - 10.1016/0009-2614(92)85977-I
M3 - Article
AN - SCOPUS:0000504777
SN - 0009-2614
VL - 196
SP - 330
EP - 336
JO - Chemical Physics Letters
JF - Chemical Physics Letters
IS - 3-4
ER -