High mobility strained Ge PMOSFETs with high-κ gate dielectric and metal gate on Si substrate

Keyphrases

• Si Substrate 100%
• High Mobility 100%
• Gate Dielectric 100%
• Metal Gate 100%
• PMOSFET 100%
• Gate Metal 100%
• Strained Ge 100%
• Active Area 33%
• Epitaxially Grown 33%
• High Vacuum Chemical Vapor Deposition 33%
• Drive Current 33%
• Current Enhancement 33%
• HfO2 33%
• Hole Mobility 33%
• Ge Film 33%

Engineering

• Si Substrate 100%
• Gate Dielectric 100%
• Metal Gate 100%
• Vapor Deposition 50%
• Chemical Vapor Deposition 50%
• Current Drive 50%
• Active Area 50%

Material Science

• Dielectric Material 100%
• Film 50%
• Chemical Vapor Deposition 50%
• Hole Mobility 50%