High mobility strained Ge PMOSFETs with high-κ gate dielectric and metal gate on Si substrate

J. P. Donnelly; D. Q. Kelly; D. I. Garcia-Gutierrez; M. José-Yacamán; S. K. Banerjee

doi:10.1049/el:20082558

High mobility strained Ge PMOSFETs with high-κ gate dielectric and metal gate on Si substrate

J. P. Donnelly, D. Q. Kelly, D. I. Garcia-Gutierrez, M. José-Yacamán, S. K. Banerjee

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A thin (∼20nm) compressively-strained selective epitaxially grown Ge film was grown on small Si active areas by ultra-high vacuum-chemical vapour deposition. The Ge PMOSFETs with HfO₂ gate dielectric show a ∼2X drive current enhancement and greater than 2X improvement in hole mobility compared to control Si PMOSFETs.

Original language	English (US)
Pages (from-to)	240-241
Number of pages	2
Journal	Electronics Letters
Volume	44
Issue number	3
DOIs	https://doi.org/10.1049/el:20082558
State	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20082558

Cite this

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title = "High mobility strained Ge PMOSFETs with high-κ gate dielectric and metal gate on Si substrate",

abstract = "A thin (∼20nm) compressively-strained selective epitaxially grown Ge film was grown on small Si active areas by ultra-high vacuum-chemical vapour deposition. The Ge PMOSFETs with HfO2 gate dielectric show a ∼2X drive current enhancement and greater than 2X improvement in hole mobility compared to control Si PMOSFETs.",

author = "Donnelly, {J. P.} and Kelly, {D. Q.} and Garcia-Gutierrez, {D. I.} and M. Jos{\'e}-Yacam{\'a}n and Banerjee, {S. K.}",

year = "2008",

doi = "10.1049/el:20082558",

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T1 - High mobility strained Ge PMOSFETs with high-κ gate dielectric and metal gate on Si substrate

AU - Donnelly, J. P.

AU - Kelly, D. Q.

AU - Garcia-Gutierrez, D. I.

AU - José-Yacamán, M.

AU - Banerjee, S. K.

PY - 2008

Y1 - 2008

N2 - A thin (∼20nm) compressively-strained selective epitaxially grown Ge film was grown on small Si active areas by ultra-high vacuum-chemical vapour deposition. The Ge PMOSFETs with HfO2 gate dielectric show a ∼2X drive current enhancement and greater than 2X improvement in hole mobility compared to control Si PMOSFETs.

AB - A thin (∼20nm) compressively-strained selective epitaxially grown Ge film was grown on small Si active areas by ultra-high vacuum-chemical vapour deposition. The Ge PMOSFETs with HfO2 gate dielectric show a ∼2X drive current enhancement and greater than 2X improvement in hole mobility compared to control Si PMOSFETs.

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High mobility strained Ge PMOSFETs with high-κ gate dielectric and metal gate on Si substrate

Abstract

ASJC Scopus subject areas

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