Nanowires of amorphous SiO2 were synthesized by thermal processing of a Si(100) substrate at 1100°C in the presence of a nitrogen flow, and using a 15 nm thick high silicon-solubility Pd/Au film as a catalyst. The substrate itself was the only source of silicon for the nanowire growth. The nanostructures produced were characterized by high resolution transmission and scanning electron microscopy and by X-ray diffraction. The nanowire growth is consistent with the vapor-liquid-solid (VLS) mechanism, with particles of Pd2Si and Au(Pd) being observed to form from the reaction between silicon and the catalytic film, and to remain at the tip of the wires. The synthesized nanowires showed a well defined morphology which could be very interesting for lasing applications.
|Original language||English (US)|
|Number of pages||7|
|Journal||Applied Physics A: Materials Science and Processing|
|State||Published - Aug 2004|
ASJC Scopus subject areas
- Materials Science(all)