Growth and thermal annealing of Cu on HfO2

H. J. Park, Y. M. Sun, H. Troiani, P. Santiago, M. J. Yacaman, J. M. White

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


The interface between Cu and HfO2 synthesized using physical vapor deposition at 300 K has been examined with in situ low-energy ion scattering (LEIS), in situ X-ray photoelectron spectroscopy (XPS) and ex situ scanning transmission electron microscopy (STEM). Cu deposited on HfO2 at 300 K readily forms three-dimensional clusters. LEIS and XPS data show that the Cu is not oxidized at the Cu-HfO2 interface. A proposed model allows simulation of the coverage of Cu as a function of Cu dosing time before and after thermal annealing. At 300 K, the model fits the data when two-dimensional islands cover no more than 90% of the HfO2 surface. After thermal annealing at 673 K for 10 min under vacuum (1 × 10-8 Torr), large Cu clusters are formed from smaller ones, but there is no evident diffusion into the HfO2. For this annealed sample, STEM shows a narrow cluster diameter distribution (10-12 nm). Strain fields at the hafnia-copper interface may help limit the cluster size distribution.

Original languageEnglish (US)
Pages (from-to)1-9
Number of pages9
JournalSurface Science
Issue number1-2
StatePublished - Dec 10 2002
Externally publishedYes


  • Clusters
  • Copper
  • Growth
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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