Gamma Irradiation in HfO_x-Based Resistive Switching Memory With Mitigated Performance Degradation Using Ruthenium Electrode

In this study, we have presented the radiation immunity of HfO_x-based resistive switching devices that meet the requirement for qualified manufacturers list verification (QMLV) and radiation hardness assurance (RHA), which potentially support low-earth-orbit (LEO), medium-earth-orbit, and geosynchronous orbit missions. Specifically, the memory window of the postradiation devices is increased by ∼1.5× when compared to preradiation devices, enabling the capability of the 1000-times endurance and 10-year retention by integrating ruthenium (Ru) as a photon-absorb sink to reduce the switching layer damage caused by overheating. These results presented that the optimized HfO_x-based resistive switching memory is not only suitable for low-power consumption, high-density memory, and LEO applications but also provides a development path to realize programmable computing chip tolerance in harsh radiation environments.