@inproceedings{caad6fd1f4644e0b80a470b3adbf59dc,
title = "Extended scalability and functionalities of MRAM based on thermally assisted writing",
abstract = "MRAM are already used in low density applications such as microcontrollers or for spatial/avionics applications where they benefit from their radiation hardness. Thermally assisted writing allows extending the downsize scalability of both FIMS and STT-MRAM below the 20nm node. Within a few years, MRAM can play an important role in the memory hierarchy of electronic circuits. They may be first used as DRAM replacement below the 20nm node and in a second step even closer the logic units (Fig.10).",
author = "B. Dieny and R. Sousa and S. Bandiera and \{Castro Souza\}, M. and S. Auffret and B. Rodmacq and Nozieres, \{J. P.\} and J. H{\'e}rault and E. Gapihan and Prejbeanu, \{I. L.\} and C. Ducruet and C. Portemont and K. Mackay and B. Cambou",
year = "2011",
doi = "10.1109/IEDM.2011.6131471",
language = "English (US)",
isbn = "9781457705052",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "1.3.1--1.3.4",
booktitle = "2011 International Electron Devices Meeting, IEDM 2011",
note = "2011 IEEE International Electron Devices Meeting, IEDM 2011 ; Conference date: 05-12-2011 Through 07-12-2011",
}