Extended scalability and functionalities of MRAM based on thermally assisted writing

B. Dieny, R. Sousa, S. Bandiera, M. Castro Souza, S. Auffret, B. Rodmacq, J. P. Nozieres, J. Hérault, E. Gapihan, I. L. Prejbeanu, C. Ducruet, C. Portemont, K. Mackay, B. Cambou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Scopus citations

Abstract

MRAM are already used in low density applications such as microcontrollers or for spatial/avionics applications where they benefit from their radiation hardness. Thermally assisted writing allows extending the downsize scalability of both FIMS and STT-MRAM below the 20nm node. Within a few years, MRAM can play an important role in the memory hierarchy of electronic circuits. They may be first used as DRAM replacement below the 20nm node and in a second step even closer the logic units (Fig.10).

Original languageEnglish (US)
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
Pages1.3.1-1.3.4
DOIs
StatePublished - 2011
Externally publishedYes
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: Dec 5 2011Dec 7 2011

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2011 IEEE International Electron Devices Meeting, IEDM 2011
Country/TerritoryUnited States
CityWashington, DC
Period12/5/1112/7/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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