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Enhancing the performance of GepFETs using novel BF
+
implantation
W. Hsu
, T. Kim
, H. Chou
, A. Rai
, M. J. Arellano-Jiménez
,
M. José-Yacamán
, M. Palard
, S. Banerjee
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
Overview
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Keyphrases
P-FET
100%
CMOS Technology
20%
Low Energy
20%
On-state Current
20%
High Performance
20%
Annealing
20%
Semiconductors
20%
Low Resistance
20%
High-bulk
20%
High-mobility Channel
20%
Hole Mobility
20%
Amorphization
20%
Ionization Rate
20%
Defect Formation
20%
Ultra-shallow Junction
20%
Short Channel
20%
Energy Regime
20%
Heavy Masses
20%
Technology Node
20%
Ion Implantation
20%
Highly Doped
20%
Material Science
Crystalline Material
100%
Amorphization
100%
Hole Mobility
100%
Engineering
Implant
100%
Nodes
25%
Defects
25%
Shallower
25%
Shallow Junction
25%
High Ionization Rate
25%
Chemistry
Implant
100%
Amorphization
25%
Hole Mobility
25%
Implanted Ion
25%