Encapsulated nanocrystals and quantum dots formed by ion beam synthesis

C. W. White; J. D. Budai; S. P. Withrow; J. G. Zhu; S. J. Pennycook; R. A. Zuhr; D. M. Hembree; D. O. Henderson; R. H. Magruder; M. J. Yacaman; G. Mondragon; S. Prawer

doi:10.1016/S0168-583X(96)00988-3

Encapsulated nanocrystals and quantum dots formed by ion beam synthesis

C. W. White, J. D. Budai, S. P. Withrow, J. G. Zhu, S. J. Pennycook, R. A. Zuhr, D. M. Hembree, D. O. Henderson, R. H. Magruder, M. J. Yacaman, G. Mondragon, S. Prawer

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

High-dose ion implantation has been used to synthesize a wide range of nanocrystals and quantum dots and to encapsulate them in host materials such as SiO₂, α-Al₂O₃, and crystalline Si. When Si nanocrystals are encapsulated in SiO₂, they exhibit dose dependent absorption and photoluminescence which provides insight into the luminescence mechanism. Compound semiconductor nanocrystals (both group III-V and group II-VI) can be formed in these matrices by sequential implantation of the individual constituents, and we discuss their synthesis and some of their physical and optical properties.

Original language	English (US)
Pages (from-to)	545-552
Number of pages	8
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	127-128
DOIs	https://doi.org/10.1016/S0168-583X(96)00988-3
State	Published - May 1997
Externally published	Yes

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/S0168-583X(96)00988-3

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White, C. W., Budai, J. D., Withrow, S. P., Zhu, J. G., Pennycook, S. J., Zuhr, R. A., Hembree, D. M., Henderson, D. O., Magruder, R. H., Yacaman, M. J., Mondragon, G., & Prawer, S. (1997). Encapsulated nanocrystals and quantum dots formed by ion beam synthesis. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 127-128, 545-552. https://doi.org/10.1016/S0168-583X(96)00988-3

White, CW, Budai, JD, Withrow, SP, Zhu, JG, Pennycook, SJ, Zuhr, RA, Hembree, DM, Henderson, DO, Magruder, RH, Yacaman, MJ, Mondragon, G & Prawer, S 1997, 'Encapsulated nanocrystals and quantum dots formed by ion beam synthesis', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 127-128, pp. 545-552. https://doi.org/10.1016/S0168-583X(96)00988-3

@article{9d107875986f4f6cabf5bc98f131a975,

title = "Encapsulated nanocrystals and quantum dots formed by ion beam synthesis",

abstract = "High-dose ion implantation has been used to synthesize a wide range of nanocrystals and quantum dots and to encapsulate them in host materials such as SiO2, α-Al2O3, and crystalline Si. When Si nanocrystals are encapsulated in SiO2, they exhibit dose dependent absorption and photoluminescence which provides insight into the luminescence mechanism. Compound semiconductor nanocrystals (both group III-V and group II-VI) can be formed in these matrices by sequential implantation of the individual constituents, and we discuss their synthesis and some of their physical and optical properties.",

author = "White, \{C. W.\} and Budai, \{J. D.\} and Withrow, \{S. P.\} and Zhu, \{J. G.\} and Pennycook, \{S. J.\} and Zuhr, \{R. A.\} and Hembree, \{D. M.\} and Henderson, \{D. O.\} and Magruder, \{R. H.\} and Yacaman, \{M. J.\} and G. Mondragon and S. Prawer",

note = "Funding Information: * Corresponding author. Tel. + 1 423 574 6295, fax + 1 423 576 8 135, e-mail [email protected]. {\textquoteright} The submitted manuscript has been authored by a contractor of the U.S. Government under contract No. DE-AC05-\%OR22464. Accordiugly, the U.S. Government retains a nonexclusive, royalty-free license to publish or reproduce the published form of this contribution, or allow others to do so, for U.S. Government purposes.",

year = "1997",

month = may,

doi = "10.1016/S0168-583X(96)00988-3",

language = "English (US)",

volume = "127-128",

pages = "545--552",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Encapsulated nanocrystals and quantum dots formed by ion beam synthesis

AU - White, C. W.

AU - Budai, J. D.

AU - Withrow, S. P.

AU - Zhu, J. G.

AU - Pennycook, S. J.

AU - Zuhr, R. A.

AU - Hembree, D. M.

AU - Henderson, D. O.

AU - Magruder, R. H.

AU - Yacaman, M. J.

AU - Mondragon, G.

AU - Prawer, S.

N1 - Funding Information: * Corresponding author. Tel. + 1 423 574 6295, fax + 1 423 576 8 135, e-mail [email protected]. ’ The submitted manuscript has been authored by a contractor of the U.S. Government under contract No. DE-AC05-%OR22464. Accordiugly, the U.S. Government retains a nonexclusive, royalty-free license to publish or reproduce the published form of this contribution, or allow others to do so, for U.S. Government purposes.

PY - 1997/5

Y1 - 1997/5

N2 - High-dose ion implantation has been used to synthesize a wide range of nanocrystals and quantum dots and to encapsulate them in host materials such as SiO2, α-Al2O3, and crystalline Si. When Si nanocrystals are encapsulated in SiO2, they exhibit dose dependent absorption and photoluminescence which provides insight into the luminescence mechanism. Compound semiconductor nanocrystals (both group III-V and group II-VI) can be formed in these matrices by sequential implantation of the individual constituents, and we discuss their synthesis and some of their physical and optical properties.

AB - High-dose ion implantation has been used to synthesize a wide range of nanocrystals and quantum dots and to encapsulate them in host materials such as SiO2, α-Al2O3, and crystalline Si. When Si nanocrystals are encapsulated in SiO2, they exhibit dose dependent absorption and photoluminescence which provides insight into the luminescence mechanism. Compound semiconductor nanocrystals (both group III-V and group II-VI) can be formed in these matrices by sequential implantation of the individual constituents, and we discuss their synthesis and some of their physical and optical properties.

UR - https://www.scopus.com/pages/publications/0031547940

UR - https://www.scopus.com/inward/citedby.url?scp=0031547940&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(96)00988-3

DO - 10.1016/S0168-583X(96)00988-3

M3 - Article

AN - SCOPUS:0031547940

SN - 0168-583X

VL - 127-128

SP - 545

EP - 552

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Encapsulated nanocrystals and quantum dots formed by ion beam synthesis

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