High-dose ion implantation has been used to synthesize a wide range of nanocrystals and quantum dots and to encapsulate them in host materials such as SiO2, α-Al2O3, and crystalline Si. When Si nanocrystals are encapsulated in SiO2, they exhibit dose dependent absorption and photoluminescence which provides insight into the luminescence mechanism. Compound semiconductor nanocrystals (both group III-V and group II-VI) can be formed in these matrices by sequential implantation of the individual constituents, and we discuss their synthesis and some of their physical and optical properties.
|Original language||English (US)|
|Number of pages||8|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|State||Published - May 1997|
ASJC Scopus subject areas
- Nuclear and High Energy Physics