Encapsulated nanocrystals and quantum dots formed by ion beam synthesis

C. W. White, J. D. Budai, S. P. Withrow, J. G. Zhu, S. J. Pennycook, R. A. Zuhr, D. M. Hembree, D. O. Henderson, R. H. Magruder, M. J. Yacaman, G. Mondragon, S. Prawer

Research output: Contribution to journalArticlepeer-review

53 Scopus citations

Abstract

High-dose ion implantation has been used to synthesize a wide range of nanocrystals and quantum dots and to encapsulate them in host materials such as SiO2, α-Al2O3, and crystalline Si. When Si nanocrystals are encapsulated in SiO2, they exhibit dose dependent absorption and photoluminescence which provides insight into the luminescence mechanism. Compound semiconductor nanocrystals (both group III-V and group II-VI) can be formed in these matrices by sequential implantation of the individual constituents, and we discuss their synthesis and some of their physical and optical properties.

Original languageEnglish (US)
Pages (from-to)545-552
Number of pages8
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume127-128
DOIs
StatePublished - May 1997
Externally publishedYes

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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