Effects of process parameter variations on the removal rate in chemical mechanical polishing of 4H-SiC

Keyphrases

• Removal Rate 100%
• 4H-SiC 100%
• Chemical Mechanical Polishing 100%
• Process Parameters Influence 100%
• Process Parameter Variation 100%
• Material Removal Rate 75%
• Rotational Speed 50%
• Wafer 50%
• Polishing Pad 50%
• Slurry pH 50%
• Temperature Effect 25%
• Material Removed 25%
• Free Surface 25%
• Rotation Rate 25%
• Silica Slurry 25%
• Damage-free 25%
• Fiber Polishing 25%
• Applied Pressure 25%
• Polishing Pressure 25%
• Polyester Fiber 25%
• Colloidal Silica 25%
• Polyurethane 25%

Engineering

• Process Parameter Variation 100%
• Removal Rate 100%
• Chemical Mechanical Polishing 100%
• Material Removal Rate 75%
• Rotational Speed 50%
• Polishing Pad 50%
• Rotation Rate 25%
• Significant Change 25%
• Free Surface 25%
• Applied Pressure 25%
• Polyurethan 25%
• Colloidal Silica Slurry 25%
• Polyester Fiber 25%

Material Science

• Chemical Mechanical Planarization 100%
• Silicon Dioxide 33%
• Polishing 33%
• Polyurethane 33%
• Polyester 33%
• Silicon Carbide 33%