The SiO x -based resistive random access memory (RRAM) is reported as the gas sensor with the spontaneous response i.e. memory window closure as air-vacuum switches, meanwhile enlarged the switching voltages in the vacuum. The HfO x /SiO x stacked structure is proposed with a superior resilience with response to ambient changes through inserting an interface structure, which attributed to the gain of the source of high defect density and Hf-encapsulation of the filamentary region as compared to single layer SiO x structures. Besides, the intrinsic nonlinear behavior is demonstrated by integrating a low dielectric layer, which suppresses the sneak path issues for large-scale SiO x -based RRAM crossbar array implementation in near future.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials