Effects of ambient sensing on SiO x -based resistive switching and resilience modulation by stacking engineering

Ying Chen Chen, Hui Chun Huang, Chih Yang Lin, Sungjun Kim, Yao Feng Chang, Jack C. Lee

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The SiO x -based resistive random access memory (RRAM) is reported as the gas sensor with the spontaneous response i.e. memory window closure as air-vacuum switches, meanwhile enlarged the switching voltages in the vacuum. The HfO x /SiO x stacked structure is proposed with a superior resilience with response to ambient changes through inserting an interface structure, which attributed to the gain of the source of high defect density and Hf-encapsulation of the filamentary region as compared to single layer SiO x structures. Besides, the intrinsic nonlinear behavior is demonstrated by integrating a low dielectric layer, which suppresses the sneak path issues for large-scale SiO x -based RRAM crossbar array implementation in near future.

Original languageEnglish (US)
Pages (from-to)P350-P354
JournalECS Journal of Solid State Science and Technology
Volume7
Issue number8
DOIs
StatePublished - 2018
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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